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Author: CNR Fine-Chemicals Finalized Programme
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: CNR Fine-Chemicals Finalized Programme
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: S. Carra
Publisher:
ISBN:
Category :
Languages : en
Pages : 348
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Author: Italian association for Crystal growth
Publisher:
ISBN:
Category :
Languages : en
Pages : 349
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Author: Ching-Hua Su
Publisher: Springer Nature
ISBN: 303039655X
Category : Technology & Engineering
Languages : en
Pages : 226
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Book Description
The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.
Author:
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 349
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Book Description
Author: B.K. Tanner
Publisher: Springer Science & Business Media
ISBN: 1475711263
Category : Science
Languages : en
Pages : 615
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Book Description
This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.
Author: J Honig
Publisher: Elsevier
ISBN: 0323144357
Category : Technology & Engineering
Languages : en
Pages : 622
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Book Description
Preparation and Characterization of Materials brings together the proceedings of the Indo-U.S. Workshop on the Preparation and Characterization of Materials, held on February 19-23, 1981, at the Indian Institute of Science in Bangalore, India. The papers focus on advances and developments in the preparation and characterization of materials such as ferroics, layered materials, metal oxides and other electronic materials, amorphous materials including glasses, and high-temperature ceramics. This book is comprised of 25 chapters and begins with a discussion on crystal growth and other preparation techniques, touching on topics such as solid state synthesis of complex oxides and preparation of soft ferrites. The application of neutron scattering techniques and analytical electron microscopy to materials research and materials science is then considered, along with the dielectric and electro-optic applications of ferroics and the preparation and characterization of synthetic layered inorganic ion exchangers. Subsequent chapters deal with metal oxides and other electronic materials; glasses and other amorphous materials; and high-temperature ceramics such as silicon nitride. This monograph will be of interest to materials scientists and engineers as well as students and researchers in materials science.
Author: Klaus-Werner Benz
Publisher: John Wiley & Sons
ISBN: 3527684344
Category : Technology & Engineering
Languages : en
Pages : 559
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Book Description
This new textbook provides for the first time a comprehensive treatment of the basics of contemporary crystallography and crystal growth in a single volume. The reader will be familiarized with the concepts for the description of morphological and structural symmetry of crystals. The architecture of crystal structures of selected inorganic and molecular crystals is illustrated. The main crystallographic databases as data sources of crystal structures are described. Nucleation processes, their kinetics and main growth mechanism will be introduced in fundamentals of crystal growth. Some phase diagrams in the solid and liquid phases in correlation with the segregation of dopants are treated on a macro- and microscale. Fluid dynamic aspects with different types of convection in melts and solutions are discussed. Various growth techniques for semiconducting materials in connection with the use of external field (magnetic fields and microgravity) are described. Crystal characterization as the overall assessment of the grown crystal is treated in detail with respect to - crystal defects - crystal quality - field of application Introduction to Crystal Growth and Characterization is an ideal textbook written in a form readily accessible to undergraduate and graduate students of crystallography, physics, chemistry, materials science and engineering. It is also a valuable resource for all scientists concerned with crystal growth and materials engineering.
Author: R. Kumar Pandey
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 386
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Book Description
Author: K. Lal
Publisher: Elsevier
ISBN: 008098469X
Category : Technology & Engineering
Languages : en
Pages : 583
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Book Description
Synthesis, Crystal Growth and Characterization presents the proceedings of the International School on Synthesis, Crystal Growth and Characterization of Materials for Energy Conversion and Storage, held on October 12-23, 1981, at the National Physical Laboratory in New Delhi, India. The book consists of lectures by distinguished scientists from around the world who tackle different aspects of synthesis, crystal growth, characterization of materials, energy conversion, and energy storage. Organized into four parts encompassing 26 chapters, the book begins with an overview of the synthesis of materials at high temperatures and pressures before turning to a discussion of how macrocrystalline and amorphous silicon is prepared. It then looks at fundamental principles underlying the process of crystal growth, both from the vapor phase and from melt, and methodically introduces the reader to the different techniques used to characterize materials, including neutron scattering and electron transport. The next chapters focus on point defects and aggregates that influence the critical electronic properties of semiconducting materials, X-ray diffraction studies of strains and stresses in thin films used in solid-state devices, and electron spectroscopic studies of solid surfaces. The book also considers the role of physics in microelectronics and vice versa, fast ion transport in solids, and the concept of Syadvada in relation to modern physics. This volume is a valuable resource for participants of the International School on Synthesis, Crystal Growth and Characterization of Materials for Energy Conversion and Storage, as well as active researchers working in areas related to the field.
