Conventional and Pendeo-epitaxial Growth of III-nitride Thin Films by Molecular Beam and Metalorganic Vapor Phase Techniques PDF Download
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Author: Kevin James Linthicum
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 366
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Author: Kevin James Linthicum
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 366
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Book Description
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: Darren Brent Thomson
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 226
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Author: Che Woei Chin
Publisher: LAP Lambert Academic Publishing
ISBN: 9783844392678
Category :
Languages : en
Pages : 124
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Book Description
Various techniques have been used to grow III-nitride heterostructures including metalorganic vapor deposition, hydride vapor epitaxy and molecular beam epitaxy (MBE). Among these techniques, MBE presents a number of advantages such as precise control of layer thickness and composition. MBE is a highly sophisticated system which thin film quality is sensitive to the growth parameters. From the literature, a systematic growth procedure has not been well-documented. This book presents an in depth understanding of MBE growth mechanism which is essential for thin film quality improvement. Detailed study on the growth mechanism allows the acquisition of the fundamental knowledge in growing precise optoelectronics device structures. This book focuses on the study of III-nitride thin films grown by MBE on various aspects, supported by analysis using a variety of structural and optical characterization techniques. The book starts with the introduction of the MBE architecture, follows by the detailed growth procedures. The characterization and analysis of various III-nitride thin films grown on Si and sapphire will be presented in the last part of the book.
Author: 黃政傑
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Maarten Reinier Leys
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 172
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Author: Li-Kang Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
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Book Description
Author: Michael William Moseley
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages :
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Book Description
Since the initial breakthroughs in structural quality and p-type conductivity in GaN during the late 1980s, the group-III nitride material system has attracted an enormous amount of interest because of its properties and applications in both electronics and optoelectronics. Although blue light-emitting diodes have been commercialized based on this success, much less progress has been made in ultraviolet emitters, green emitters, and photovoltaics. This lack of development has been attributed to insufficient structural and electrical material quality, which is directly linked to the growth of the material. The objective of this work is to expand the understanding of III-nitride growth towards the improvement of current device capabilities and the facilitation of novel device designs. :Group-III nitride thin films are grown by molecular-beam epitaxy in a pulsed, metal-rich environment. The growths of nitride binaries and ternaries are observed in situ by transient reflection high-energy electron diffraction (RHEED) intensities, which respond to the behavior of atoms on the growing surface. By analyzing and interpreting these RHEED signatures, a comprehensive understanding of nitride thin film growth is obtained. :The growth kinetics of unintentionally doped GaN by metal-rich MBE are elucidated, and a novel method of in situ growth rate measurement is discovered. This technique is expanded to InN, highlighting the similarity in molecular-beam epitaxy growth kinetics between III-nitride binaries. The growth of Mg-doped GaN is then explored to increase Mg incorporation and electrical activation. The growth of InxGa1-xN alloys are investigated with the goal of eliminating phase separation, which enables single-phase material for use in photovoltaics. Finally, the growth of unintentionally doped and Mg-doped AlGaN is investigated towards higher efficiency light emitting diodes. :These advancements in the understanding of III-nitride growth will address several critical problems and enable devices relying on consistent growth in production, single-phase material, and practical hole concentrations in materials with high carrier activation energies.
Author: Timothy J. Anderson
Publisher:
ISBN:
Category :
Languages : en
Pages : 260
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Book Description
A program to compare the chloride, hydride and metal organic chemical vapor deposition techniques is described. A deposition system capable of depositing films by all three techniques was constructed and equipped with a modulated molecular beam mass spectrometer and, more recently, A Raman spectrometer. The thermal decomposition kinetics of NH3, PH3 and AsH3 were measured and the results applied to reactor operation. The hydride source region was analyzed and design procedure established. The unintentional incorporation of Si in GaAs and InP with the MOCVD process was investigated and methods of reducing these levels suggested. Substrates preparation procedures were compared using UHV surface analysis tools. A significatn amount of hydrogen was found in GaAs (100) substrates. Keywords: Vapor phase epitaxy, III-V semiconductors, Thin films, Ammonia, Phosphides, Gallium arsenides. (MJM).
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 816
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