Author: H. L. Grubin
Publisher:
ISBN:
Category :
Languages : en
Pages : 6
Book Description
Conceptual Problems in Modeling Submicron Device Physics
Author: H. L. Grubin
Publisher:
ISBN:
Category :
Languages : en
Pages : 6
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 6
Book Description
Physics of Submicron Devices
Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1461532841
Category : Science
Languages : en
Pages : 409
Book Description
The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips.
Publisher: Springer Science & Business Media
ISBN: 1461532841
Category : Science
Languages : en
Pages : 409
Book Description
The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips.
Technical Abstract Bulletin
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 224
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 224
Book Description
Physics Briefs
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1280
Book Description
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1280
Book Description
Physics-based Modeling of Hot-electron Effects in Submicron Semiconductor Devices for CAD Applications
Author: Shiuh-Luen Wang
Publisher:
ISBN:
Category : Hot carriers
Languages : en
Pages : 330
Book Description
Publisher:
ISBN:
Category : Hot carriers
Languages : en
Pages : 330
Book Description
Electrical Properties and Fabrication Techniques of Extremely-short Gate Length GaAs Single-gate and Dual-gate MESFET's
Author: Pane-Chane Chao
Publisher:
ISBN:
Category : Diodes, Schottky-barrier
Languages : en
Pages : 408
Book Description
Publisher:
ISBN:
Category : Diodes, Schottky-barrier
Languages : en
Pages : 408
Book Description
Silicon And Beyond: Advanced Device Models And Circuit Simulators
Author: Tor A Fjeldly
Publisher: World Scientific
ISBN: 9814493260
Category : Technology & Engineering
Languages : en
Pages : 188
Book Description
The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field.The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.
Publisher: World Scientific
ISBN: 9814493260
Category : Technology & Engineering
Languages : en
Pages : 188
Book Description
The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field.The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.
Quantum Transport in Submicron Devices
Author: Wim Magnus
Publisher: Springer Science & Business Media
ISBN: 3642561330
Category : Technology & Engineering
Languages : en
Pages : 276
Book Description
The aim of this book is to resolve the problem of electron and hole transport with a coherent and consistent theory that is relevant to the understanding of transport phenomena in submicron devices. Along the road, readers encounter landmarks in theoretical physics as the authors guide them through the strong and weak aspects of various hypotheses.
Publisher: Springer Science & Business Media
ISBN: 3642561330
Category : Technology & Engineering
Languages : en
Pages : 276
Book Description
The aim of this book is to resolve the problem of electron and hole transport with a coherent and consistent theory that is relevant to the understanding of transport phenomena in submicron devices. Along the road, readers encounter landmarks in theoretical physics as the authors guide them through the strong and weak aspects of various hypotheses.
Sub-Micron Semiconductor Devices
Author: Ashish Raman
Publisher: CRC Press
ISBN: 1000577236
Category : Technology & Engineering
Languages : en
Pages : 410
Book Description
This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques. The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.
Publisher: CRC Press
ISBN: 1000577236
Category : Technology & Engineering
Languages : en
Pages : 410
Book Description
This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques. The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.
Device Physics Technologies and Modelling for the Sub-Micron Era
Author: IEE. Electronics Division. Professional Group E3 (Microelectronics and Semiconductor Devices)
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description