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Author: Krzysztof Iniewski
Publisher: Springer Science & Business Media
ISBN: 9048192161
Category : Technology & Engineering
Languages : en
Pages : 381
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Book Description
CMOS Processors and Memories addresses the-state-of-the-art in integrated circuit design in the context of emerging computing systems. New design opportunities in memories and processor are discussed. Emerging materials that can take system performance beyond standard CMOS, like carbon nanotubes, graphene, ferroelectrics and tunnel junctions are explored. CMOS Processors and Memories is divided into two parts: processors and memories. In the first part we start with high performance, low power processor design, followed by a chapter on multi-core processing. They both represent state-of-the-art concepts in current computing industry. The third chapter deals with asynchronous design that still carries lots of promise for future computing needs. At the end we present a “hardware design space exploration” methodology for implementing and analyzing the hardware for the Bayesian inference framework. This particular methodology involves: analyzing the computational cost and exploring candidate hardware components, proposing various custom architectures using both traditional CMOS and hybrid nanotechnology CMOL. The first part concludes with hybrid CMOS-Nano architectures. The second, memory part covers state-of-the-art SRAM, DRAM, and flash memories as well as emerging device concepts. Semiconductor memory is a good example of the full custom design that applies various analog and logic circuits to utilize the memory cell’s device physics. Critical physical effects that include tunneling, hot electron injection, charge trapping (Flash memory) are discussed in detail. Emerging memories like FRAM, PRAM and ReRAM that depend on magnetization, electron spin alignment, ferroelectric effect, built-in potential well, quantum effects, and thermal melting are also described. CMOS Processors and Memories is a must for anyone serious about circuit design for future computing technologies. The book is written by top notch international experts in industry and academia. It can be used in graduate course curriculum.
Author: Krzysztof Iniewski
Publisher: Springer Science & Business Media
ISBN: 9048192161
Category : Technology & Engineering
Languages : en
Pages : 381
Get Book
Book Description
CMOS Processors and Memories addresses the-state-of-the-art in integrated circuit design in the context of emerging computing systems. New design opportunities in memories and processor are discussed. Emerging materials that can take system performance beyond standard CMOS, like carbon nanotubes, graphene, ferroelectrics and tunnel junctions are explored. CMOS Processors and Memories is divided into two parts: processors and memories. In the first part we start with high performance, low power processor design, followed by a chapter on multi-core processing. They both represent state-of-the-art concepts in current computing industry. The third chapter deals with asynchronous design that still carries lots of promise for future computing needs. At the end we present a “hardware design space exploration” methodology for implementing and analyzing the hardware for the Bayesian inference framework. This particular methodology involves: analyzing the computational cost and exploring candidate hardware components, proposing various custom architectures using both traditional CMOS and hybrid nanotechnology CMOL. The first part concludes with hybrid CMOS-Nano architectures. The second, memory part covers state-of-the-art SRAM, DRAM, and flash memories as well as emerging device concepts. Semiconductor memory is a good example of the full custom design that applies various analog and logic circuits to utilize the memory cell’s device physics. Critical physical effects that include tunneling, hot electron injection, charge trapping (Flash memory) are discussed in detail. Emerging memories like FRAM, PRAM and ReRAM that depend on magnetization, electron spin alignment, ferroelectric effect, built-in potential well, quantum effects, and thermal melting are also described. CMOS Processors and Memories is a must for anyone serious about circuit design for future computing technologies. The book is written by top notch international experts in industry and academia. It can be used in graduate course curriculum.
Author: Krzysztof Iniewski
Publisher:
ISBN: 9789048192175
Category :
Languages : en
Pages : 388
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Book Description
Author: Tegze P. Haraszti
Publisher: Springer Science & Business Media
ISBN: 0306470357
Category : Technology & Engineering
Languages : en
Pages : 567
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Book Description
CMOS Memory Circuits is a systematic and comprehensive reference work designed to aid in the understanding of CMOS memory circuits, architectures, and design techniques. CMOS technology is the dominant fabrication method and almost the exclusive choice for semiconductor memory designers. Both the quantity and the variety of complementary-metal-oxide-semiconductor (CMOS) memories are staggering. CMOS memories are traded as mass-products worldwide and are diversified to satisfy nearly all practical requirements in operational speed, power, size, and environmental tolerance. Without the outstanding speed, power, and packing density characteristics of CMOS memories, neither personal computing, nor space exploration, nor superior defense systems, nor many other feats of human ingenuity could be accomplished. Electronic systems need continuous improvements in speed performance, power consumption, packing density, size, weight, and costs. These needs continue to spur the rapid advancement of CMOS memory processing and circuit technologies. CMOS Memory Circuits is essential for those who intend to (1) understand, (2) apply, (3) design and (4) develop CMOS memories.
Author: Wai-Kai Chen
Publisher: CRC Press
ISBN: 020301023X
Category : Technology & Engineering
Languages : en
Pages : 386
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Book Description
Timing, memory, power dissipation, testing, and testability are all crucial elements of VLSI circuit design. In this volume culled from the popular VLSI Handbook, experts from around the world provide in-depth discussions on these and related topics. Stacked gate, embedded, and flash memory all receive detailed treatment, including their power cons
Author:
Publisher: ASM International
ISBN: 9780871702852
Category : Technology & Engineering
Languages : en
Pages : 1234
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Book Description
Volume 1: Packaging is an authoritative reference source of practical information for the design or process engineer who must make informed day-to-day decisions about the materials and processes of microelectronic packaging. Its 117 articles offer the collective knowledge, wisdom, and judgement of 407 microelectronics packaging experts-authors, co-authors, and reviewers-representing 192 companies, universities, laboratories, and other organizations. This is the inaugural volume of ASMAs all-new ElectronicMaterials Handbook series, designed to be the Metals Handbook of electronics technology. In over 65 years of publishing the Metals Handbook, ASM has developed a unique editorial method of compiling large technical reference books. ASMAs access to leading materials technology experts enables to organize these books on an industry consensus basis. Behind every article. Is an author who is a top expert in its specific subject area. This multi-author approach ensures the best, most timely information throughout. Individually selected panels of 5 and 6 peers review each article for technical accuracy, generic point of view, and completeness.Volumes in the Electronic Materials Handbook series are multidisciplinary, to reflect industry practice applied in integrating multiple technology disciplines necessary to any program in advanced electronics. Volume 1: Packaging focusing on the middle level of the electronics technology size spectrum, offers the greatest practical value to the largest and broadest group of users. Future volumes in the series will address topics on larger (integrated electronic assemblies) and smaller (semiconductor materials and devices) size levels.
Author: Ashok K. Sharma
Publisher: Wiley-IEEE Press
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 680
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Book Description
A valuable reference for the most vital microelectronic components in the marketplace DRAMs are the technology drivers of high volume semiconductor fabrication processes for new generation products that, in addition to computer markets, are finding increased usage in automotive, aviation, military and space, telecommunications, and wireless industries. A new generation of high-density and high-performance memory architectures evolving for mass storage devices, including embedded memories and nonvolatile flash memories, are serving a diverse range of applications. Comprehensive and up to date, Advanced Semiconductor Memories: Architectures, Designs, and Applications offers professionals in the semiconductor and related industries an in-depth review of advanced semiconductor memories technology developments. It provides details on: Static Random Access Memory technologies including advanced architectures, low voltage SRAMs, fast SRAMs, SOI SRAMs, and specialty SRAMs (multiport, FIFOs, CAMs) High Performance Dynamic Random Access Memory-DDRs, synchronous DRAM/SGRAM features and architectures, EDRAM, CDRAM, Gigabit DRAM scaling issues and architectures, multilevel storage DRAMs, and SOI DRAMs Applications-specific DRAM architectures and designs - VRAMs, DDR SGRAMs, RDRAMs, SLDRAMs, 3-D RAM Advanced Nonvolatile Memory designs and technologies, including floating gate cell theory, EEPROM/flash memory cell design, and multilevel flash FRAMs and reliability issues Embedded memory designs and applications, including cache, merged processor, DRAM architectures, memory cards, and multimedia applications Future memory directions with megabytes to terabytes storage capacities using RTDs, single electron memories, etc. A continuation of the topics introduced in Semiconductor Memories: Technology, Testing, and Reliability, the author's earlier work, Advanced Semiconductor Memories: Architectures, Designs, and Applications offers a much-needed reference to the major developments and future directions of advanced semiconductor memory technology.
Author: Jayasimha Atulasimha
Publisher: John Wiley & Sons
ISBN: 1118869249
Category : Technology & Engineering
Languages : en
Pages : 352
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Book Description
Nanomagnetic and spintronic computing devices are strong contenders for future replacements of CMOS. This is an important and rapidly evolving area with the semiconductor industry investing significantly in the study of nanomagnetic phenomena and in developing strategies to pinpoint and regulate nanomagnetic reliably with a high degree of energy efficiency. This timely book explores the recent and on-going research into nanomagnetic-based technology. Key features: Detailed background material and comprehensive descriptions of the current state-of-the-art research on each topic. Focuses on direct applications to devices that have potential to replace CMOS devices for computing applications such as memory, logic and higher order information processing. Discusses spin-based devices where the spin degree of freedom of charge carriers are exploited for device operation and ultimately information processing. Describes magnet switching methodologies to minimize energy dissipation. Comprehensive bibliographies included for each chapter enabling readers to conduct further research in this field. Written by internationally recognized experts, this book provides an overview of a rapidly burgeoning field for electronic device engineers, field-based applied physicists, material scientists and nanotechnologists. Furthermore, its clear and concise form equips readers with the basic understanding required to comprehend the present stage of development and to be able to contribute to future development. Nanomagnetic and Spintronic Devices for Energy-Efficient Memory and Computing is also an indispensable resource for students and researchers interested in computer hardware, device physics and circuits design.
Author: McGraw-Hill Education
Publisher: McGraw Hill Professional
ISBN: 0071782982
Category : Reference
Languages : en
Pages : 480
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Book Description
Includes coverage of forefront fields such as cell and molecular biology, environmental science, genetics, information technology, nanotechnology, chemistry, and theoretical physics An extensive subject index makes finding information fast and easy Features numerous cross-references to the McGraw-Hill Encyclopedia of Science & Technology and bibliographies of key literature after each article 250+ images, diagrams, and tables enhance the text
Author: Taku Onishi
Publisher: Springer Nature
ISBN: 9811926697
Category : Science
Languages : en
Pages : 207
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Book Description
This book is intended for theoretical and experimental researchers who are interested in ferroelectrics and advanced memory. After introducing readers to dielectric, perovskites, advanced memories, and ferroelectric, it explains quantum simulation. Then, using molecular orbital calculation results, it explains the ferroelectric mechanism in perovskite titanium oxides in concrete terms. Lastly, the book examines the materials designed for high-performance ferroelectrics and discusses the future of high-speed memory.
Author: Alexander Thomasian
Publisher: Academic Press
ISBN: 0323908098
Category : Science
Languages : en
Pages : 748
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Book Description
Storage Systems: Organization, Performance, Coding, Reliability and Their Data Processing was motivated by the 1988 Redundant Array of Inexpensive/Independent Disks proposal to replace large form factor mainframe disks with an array of commodity disks. Disk loads are balanced by striping data into strips—with one strip per disk— and storage reliability is enhanced via replication or erasure coding, which at best dedicates k strips per stripe to tolerate k disk failures. Flash memories have resulted in a paradigm shift with Solid State Drives (SSDs) replacing Hard Disk Drives (HDDs) for high performance applications. RAID and Flash have resulted in the emergence of new storage companies, namely EMC, NetApp, SanDisk, and Purestorage, and a multibillion-dollar storage market. Key new conferences and publications are reviewed in this book.The goal of the book is to expose students, researchers, and IT professionals to the more important developments in storage systems, while covering the evolution of storage technologies, traditional and novel databases, and novel sources of data. We describe several prototypes: FAWN at CMU, RAMCloud at Stanford, and Lightstore at MIT; Oracle's Exadata, AWS' Aurora, Alibaba's PolarDB, Fungible Data Center; and author's paper designs for cloud storage, namely heterogeneous disk arrays and hierarchical RAID. Surveys storage technologies and lists sources of data: measurements, text, audio, images, and video Familiarizes with paradigms to improve performance: caching, prefetching, log-structured file systems, and merge-trees (LSMs) Describes RAID organizations and analyzes their performance and reliability Conserves storage via data compression, deduplication, compaction, and secures data via encryption Specifies implications of storage technologies on performance and power consumption Exemplifies database parallelism for big data, analytics, deep learning via multicore CPUs, GPUs, FPGAs, and ASICs, e.g., Google's Tensor Processing Units
