Chemical Processing of Dielectrics, Insulators and Electronic Ceramics: Volume 606

Chemical Processing of Dielectrics, Insulators and Electronic Ceramics: Volume 606 PDF Author: Anthony C. Jones
Publisher:
ISBN:
Category : Crafts & Hobbies
Languages : en
Pages : 336

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Chemical Processing of Dielectrics, Insulators and Electronic Ceramics: Volume 606

Chemical Processing of Dielectrics, Insulators and Electronic Ceramics: Volume 606 PDF Author: Anthony C. Jones
Publisher:
ISBN:
Category : Crafts & Hobbies
Languages : en
Pages : 336

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Molecular Electronics: Volume 582

Molecular Electronics: Volume 582 PDF Author: Sokrates T. Pantelides
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 144

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

The Granular State: Volume 627

The Granular State: Volume 627 PDF Author: Surajit Sen
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 338

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Book Description
These 38 papers from the April 2000 symposium study granular structure, granular flows, nonlinear waves in granular media, vibrated and rotated granular media, and stress distributions. Topics include jamming in liquids and granular materials, nuclear magnetic resonance studies of granular flows, the blueprint of a concept for a nozzle- free inkjet printer, mixing and segregation processes in a Turbula blender, persistence of granular structure during die compaction of ceramic powders, and humidity-induced cohesion effects in granular media. c. Book News Inc.

Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610

Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610 PDF Author: Aditya Agarwal
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448

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Book Description
This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.

Solid Freeform and Additive Fabrication - 2000: Volume 625

Solid Freeform and Additive Fabrication - 2000: Volume 625 PDF Author: Stephen C. Danforth
Publisher: Mrs Proceedings
ISBN:
Category : Computers
Languages : en
Pages : 240

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Wide-Bandgap Electronic Devices: Volume 622

Wide-Bandgap Electronic Devices: Volume 622 PDF Author: R. J. Shul
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 578

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Book Description
Interest in wide-bandgap semiconductors for high-power/high-temperature electronics remains prominent. For such applications, SiC is by far the most mature semiconductor material. GaN and diamond, however, have also become prime candidates. While diamond has several advantages over the other two materials, producing large single crystals, as well as the inability to achieve n-type doping, have limited device fabrication. For GaN, recent advances in crystal growth and processing capabilities, as well as excellent transport properties, have yielded a great deal of device development, yet thermal conduction remains an issue. SiC has excellent thermal conductivity, high-breakdown voltages, and well-developed substrates and processing techniques. This book deals with a wide range of technical activity in the area of wide-bandgap high-power/high-temperature electronic devices and covers topics including the fabrication and performance of GaN-based and SiC-based devices, as well as issues related to growth, characterization, and processing of wide-bandgap materials. Several summaries of the current status of the field are provided.

Magnetic Materials, Structures and Processing for Information Storage: Volume 614

Magnetic Materials, Structures and Processing for Information Storage: Volume 614 PDF Author: Materials Research Society. Fall Meeting
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 200

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Materials Development for Direct Write Technologies: Volume 624

Materials Development for Direct Write Technologies: Volume 624 PDF Author: Douglas B. Chrisey
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 312

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays: Volume 621

Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays: Volume 621 PDF Author: Kevin L. Jensen
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 584

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Chemical-mechanical Polishing

Chemical-mechanical Polishing PDF Author:
Publisher:
ISBN:
Category : Electrolytic polishing
Languages : en
Pages : 184

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Book Description