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Author: Selin Özden
Publisher:
ISBN:
Category :
Languages : en
Pages : 514
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Book Description
Mercury Cadmium Telluride (HgCdTe) is widely used material for infrared detection. Epitaxial growths carried on Gallium arsenide (GaAs) substrates gained more attention in recent years due to commercially availability of epi-ready wafers. However, large lattice mismatch between the HgCdTe epilayer and GaAs substrates, and Gallium (Ga) diffusion into HgCdTe layers during growth limit the device performance. In order to decrease large lattice mismatch and hereby dislocations formed at HgCdTe epilayer, a closely lattice matched Cadmium Telluride (CdTe) is preffered buffer layer for Molecular Beam Epitaxial (MBE) growth of HgCdTe. This thesis focuses on a study of defects on (211)B CdTe buffer layers grown on (211)B oriented GaAs substrates by MBE. Prior to epitaxial growth of CdTe layers, to understand the effect of wet cleaning procedure on chemical composition of epi-ready GaAs wafers, piranha solution-based wet chemical etching and oxide removal processes using diluted hydrofluoric acid (HF) were performed on undoped 625≤25 [mu]m thick GaAs(211)B wafers. The surfaces of GaAs wafers were investigated by Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The variation of As2O3 and Ga2O3 contents on GaAs (211)B wafers studied by Raman spectroscopy. Following the growth of CdTe (211)B epitaxial films, the quality of CdTe layers were investigated in detail by various characterization techniques such as AFM, SEM, Nomarski Microscopy, X-ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Raman Spectroscopy. Thicknesses of CdTe layers were calculated via intensity oscillations in the transmittance spectrum of the films.
Author: Selin Özden
Publisher:
ISBN:
Category :
Languages : en
Pages : 514
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Book Description
Mercury Cadmium Telluride (HgCdTe) is widely used material for infrared detection. Epitaxial growths carried on Gallium arsenide (GaAs) substrates gained more attention in recent years due to commercially availability of epi-ready wafers. However, large lattice mismatch between the HgCdTe epilayer and GaAs substrates, and Gallium (Ga) diffusion into HgCdTe layers during growth limit the device performance. In order to decrease large lattice mismatch and hereby dislocations formed at HgCdTe epilayer, a closely lattice matched Cadmium Telluride (CdTe) is preffered buffer layer for Molecular Beam Epitaxial (MBE) growth of HgCdTe. This thesis focuses on a study of defects on (211)B CdTe buffer layers grown on (211)B oriented GaAs substrates by MBE. Prior to epitaxial growth of CdTe layers, to understand the effect of wet cleaning procedure on chemical composition of epi-ready GaAs wafers, piranha solution-based wet chemical etching and oxide removal processes using diluted hydrofluoric acid (HF) were performed on undoped 625≤25 [mu]m thick GaAs(211)B wafers. The surfaces of GaAs wafers were investigated by Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The variation of As2O3 and Ga2O3 contents on GaAs (211)B wafers studied by Raman spectroscopy. Following the growth of CdTe (211)B epitaxial films, the quality of CdTe layers were investigated in detail by various characterization techniques such as AFM, SEM, Nomarski Microscopy, X-ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Raman Spectroscopy. Thicknesses of CdTe layers were calculated via intensity oscillations in the transmittance spectrum of the films.
Author: Goutam Mukherjee
Publisher:
ISBN:
Category : Magnetrons
Languages : en
Pages : 166
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Book Description
Hall measurements on sputter-deposited epitaxial PbTe films have confirmed that samples prepared at high growth temperatures are n-type and those grown at low substrate temperatures are p-type, irrespective of the substrate bias applied during growth. The low temperature mobility values in the sputter-deposited samples are found to be limited by a temperature-independent neutral impurity scattering mechanism. One of the features of heteroepitaxial growth is the existence of a large density of structural defects at the interface due to lattice mismatch. (Abstract shortened by UMI.).
Author: A.G. Cullis
Publisher: CRC Press
ISBN: 1000157016
Category : Science
Languages : en
Pages : 836
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Book Description
The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.
Author: Lianfeng Fu
Publisher:
ISBN:
Category :
Languages : en
Pages : 382
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Book Description
Author:
Publisher: Elsevier
ISBN: 0080965148
Category : Science
Languages : en
Pages : 292
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Book Description
Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful. - Detailed coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT - Review of the CdTe recent developments - Fundamental background of many topics clearly introduced and exposed
Author: E. Kasper
Publisher: CRC Press
ISBN: 1351085077
Category : Technology & Engineering
Languages : en
Pages : 306
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Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: G. Bastard
Publisher: Elsevier
ISBN: 0444596720
Category : Science
Languages : en
Pages : 554
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Book Description
This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Author: John E. Ayers
Publisher: CRC Press
ISBN: 135183780X
Category : Technology & Engineering
Languages : en
Pages : 388
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Book Description
Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1058
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Book Description
Author: K. Sumino
Publisher: Elsevier
ISBN: 0444600647
Category : Technology & Engineering
Languages : en
Pages : 817
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Book Description
Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
