Characterization in Compound Semiconductor Processing PDF Download
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Author: Gary E. McGuire
Publisher: Momentum Press
ISBN: 1606500430
Category : Technology & Engineering
Languages : en
Pages : 217
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Book Description
Compound semiconductors such as Gallium Arsenide, Gallium Aluminum Arsenide, and Indium Phosphide are often difficult to characterize and present a variety of challenges from substrate preparation, to epitaxial growth to dielectric film deposition to dopant introduction. This book reviews the common classes of compound semiconductors, their physical, optical and electrical properties and the various types of methods used for characterizing them when analyzing for defects and application problems. The book features: -- Characterization of III-V Thin Films for Electronic and Optical applications -- Characterization of Dielectric Insulating Film layers -- A Special case study on Deep Level Transient Spectroscopy on GaAs -- Concise summaries of major characterization technologies for compound semiconductor materials, including Auger Electron Spectroscopy, Ballistic Electron Emission Microscopy, Energy-Dispersive X-Ray Spectroscopy, Neutron Activation Analysis and Raman Spectroscopy
Author: Gary E. McGuire
Publisher: Momentum Press
ISBN: 1606500430
Category : Technology & Engineering
Languages : en
Pages : 217
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Book Description
Compound semiconductors such as Gallium Arsenide, Gallium Aluminum Arsenide, and Indium Phosphide are often difficult to characterize and present a variety of challenges from substrate preparation, to epitaxial growth to dielectric film deposition to dopant introduction. This book reviews the common classes of compound semiconductors, their physical, optical and electrical properties and the various types of methods used for characterizing them when analyzing for defects and application problems. The book features: -- Characterization of III-V Thin Films for Electronic and Optical applications -- Characterization of Dielectric Insulating Film layers -- A Special case study on Deep Level Transient Spectroscopy on GaAs -- Concise summaries of major characterization technologies for compound semiconductor materials, including Auger Electron Spectroscopy, Ballistic Electron Emission Microscopy, Energy-Dispersive X-Ray Spectroscopy, Neutron Activation Analysis and Raman Spectroscopy
Author: Yale Strausser
Publisher: Momentum Press
ISBN: 1606500414
Category : Technology & Engineering
Languages : en
Pages : 217
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Book Description
"Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction."--P. [4] of cover.
Author: Paul H. Holloway
Publisher: Cambridge University Press
ISBN: 0080946143
Category : Technology & Engineering
Languages : en
Pages : 937
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Book Description
This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
Author: W. Murray Bullis
Publisher: American Institute of Physics
ISBN:
Category : Science
Languages : en
Pages : 760
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Book Description
Market: Those in government, industry, and academia interested in state-of-the-art knowledge on semiconductor characterization for research, development, and manufacturing. Based on papers given at an International Nist Workshop in January 1995, Semiconductor Characterization covers the unique characterization requirements of both silicon IC development and manufacturing, and compound semiconductor materials, devices, and manufacturing. Additional sections discuss technology trends and future requirements for compound semiconductor applications. Also highlighted are recent developments in characterization, including in- situ, in-FAB, and off-line analysis methods. The book provides a concise, effective portrayal of industry needs and problems in the important specialty of metrology for semiconductor technology.
Author: Ching-Hua Su
Publisher: Springer Nature
ISBN: 303039655X
Category : Technology & Engineering
Languages : en
Pages : 226
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Book Description
The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.
Author: G. Bastard
Publisher: Elsevier
ISBN: 0444596720
Category : Science
Languages : en
Pages : 554
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Book Description
This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
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Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: Paul H. Holloway
Publisher: CRC Press
ISBN: 9780849301650
Category : Technology & Engineering
Languages : en
Pages : 164
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Book Description
This book provides a review of the state-of-the-advancing-art in growth, processing and devices from compound semiconductors. Consisting of the proceedings of an important topical conference held at the University of Florida, speakers from both the U.S. and Japan were present. This fascinating work discusses critical issues in growth and characterization by semi-insulating bulk crystals, with particular emphasis placed on the latest modification of gas sources. It includes the advantages, limitations, and techniques pertaining to chemical vapor deposition. This compilation presents the most recent advances in the new technologies involving compound semiconductors, thus it fills an important need in the fast-moving field of microelectronics. This one-of-a-kind resource provides contrasts and insight into U.S. and Japanese technologies and devices as well as indications of future directions. It provides a very up-to-date and comprehensive treatment of world-class scientific and technological developments in this astounding area of major commercial importance. These proceedings will be a useful, indispensable resource for scientific researchers, process engineers, and technology strategists.
Author: Charles A. Evans
Publisher: Gulf Professional Publishing
ISBN: 9780750691680
Category : Science
Languages : en
Pages : 784
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Book Description
"This is a comprehensive volume on analytical techniques used in materials science for the characterization of surfaces, interfaces and thin films. This flagship volume is a unique, stand-alone reference for materials science practitioners, process engineers, students and anyone with a need to know about the capabilities available in materials analysis. An encyclopedia of 50 concise articles, this book will also be a practical companion to the forthcoming books in the series."--Knovel.
Author: Gyu-Chul Yi
Publisher: Springer Science & Business Media
ISBN: 3642224806
Category : Technology & Engineering
Languages : en
Pages : 347
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Book Description
This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.
