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Author: Jung-Kai Hong
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 190
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Book Description
Author: Jung-Kai Hong
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 190
Get Book Here
Book Description
Author: Peter Ashburn
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 222
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Book Description
Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Author: Vinod Kumar Khanna
Publisher: John Wiley & Sons
ISBN: 047166099X
Category : Technology & Engineering
Languages : en
Pages : 648
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Book Description
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Author: Michael Schrter
Publisher: World Scientific
ISBN: 981427321X
Category : Technology & Engineering
Languages : en
Pages : 753
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Book Description
Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Author: Peter Ashburn
Publisher: John Wiley & Sons
ISBN: 0470090731
Category : Technology & Engineering
Languages : en
Pages : 286
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Book Description
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Author: Allen A. Sweet
Publisher: Artech House
ISBN: 1596931280
Category : Technology & Engineering
Languages : en
Pages : 330
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Book Description
If you're looking for an in-depth and up-to-date understanding bipolar transistor RFIC design, this practical resource is a smart choice. Unlike most books on the market that focus on GaAs MESFET or silicon CMOS process technology, this unique volume is dedicated exclusively to RFIC designs based on bipolar technology. Until now, critical GaAs HBT and SiGe HBT process technologies have been largely neglected in reference books. This book fills this gap, offering you a detailed treatment of this increasingly important topic. You discover a wide range of circuit topologies that are optimized for maximum performance with bipolar devices. From discussions of key applications (Bluetooth, UWB, GPS, WiMax) and architectures… to in-depth coverage of fabrication technologies and amplifier design… to a look at performance tradeoffs and production costs, this book arms you with complete design know-how for your challenging work in the field.
Author: Erik Haralson
Publisher:
ISBN:
Category :
Languages : en
Pages : 105
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Book Description
Author: Micheal A.P. Pertijs
Publisher: Springer Science & Business Media
ISBN: 1402052588
Category : Technology & Engineering
Languages : en
Pages : 308
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Book Description
This book describes the analysis and design of precision temperature sensors in CMOS IC technology, focusing on so-called smart temperature sensors, which provide a digital output signal that can be readily interpreted by a computer. The text shows how temperature characteristics can be used to obtain an accurate digital temperature reading. The book ends with a detailed description of three prototypes, one of which achieves the best performance reported to date.
Author: Amir M. Sodagar
Publisher: CRC Press
ISBN: 1420046454
Category : Technology & Engineering
Languages : en
Pages : 411
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Book Description
The classical approach to analog circuit analysis is a daunting prospect to many students, requiring tedious enumeration of contributing factors and lengthy calculations. Most textbooks apply this cumbersome approach to small-signal amplifiers, which becomes even more difficult as the number of components increases. Analysis of Bipolar and CMOS Amplifiers offers students an alternative that enables quick and intuitive analysis and design: the analysis-by-inspection method. This practical and student-friendly text demonstrates how to achieve approximate results that fall within an acceptable range of accuracy and are based on sound scientific principles. Working from the basics of amplifiers and transistors to biasing, single- and multistage amplifiers, current sources and mirrors, and analysis at midband, low, and high frequencies, the author demonstrates the interrelationship between behavior in both the time and frequency domains and balances the discussion between bipolar and CMOS circuits. Each chapter closes with a set of simulation examples in SPICE and MATLAB® that give students hands-on experience applying the concepts and methods using industry-standard tools. Building a practical working knowledge around a solid theoretical framework, Analysis of Bipolar and CMOS Amplifiers prepares your students to meet the challenges of quick and accurate approximations and software-based analysis awaiting them in the workplace.
Author: M F Chang
Publisher: World Scientific
ISBN: 9814501069
Category : Technology & Engineering
Languages : en
Pages : 437
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Book Description
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
