Auger Electron Spectroscopy Reference Manual PDF Download
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Author: G. McGuire
Publisher: Springer Science & Business Media
ISBN: 1475717024
Category : Science
Languages : en
Pages : 144
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Book Description
Auger electron spectroscopy (AES) is based on the Auger total secondary electron energy distribution, and an ion gun to process, which involves the core-level ionization of an atom with provide depth profiling capability. subsequent deexcitation occurring by an outer-level electron de The high surface sensitivity of Auger spectroscopy which dictates caying to fill the core hole. The excess energy is transferred to the need for an ultrahigh-vacuum system is due to the limited and causes the ejection of another electron, which is by definition mean free path of electrons in the 0-3000 e V kinetic energy an Auger electron. The Auger electron transition, denoted by range. The Auger peaks decay exponentially with overlayer cov the electron levels involved, is independent of the excitation erage, which is consistent with an exponential dependence of source and leaves the atom with a constant kinetic energy. The escape probability on the depth of the parent atom. A compila kinetic energy is given by the differences in binding energies for tion of data from a variety of sources has been used to generate the three levels (for example, EK-E L, - EL ) minus a correction 2 an escape depth curve which falls in the range of 5-30 A in the term for the work function and electron wave function relaxation. energy range from 0 to 3000 eV. The observed escape depth does When the Auger transition occurs within a few angstroms of the not show a strong dependence on the matrix.
Author: G. McGuire
Publisher: Springer Science & Business Media
ISBN: 1475717024
Category : Science
Languages : en
Pages : 144
Get Book
Book Description
Auger electron spectroscopy (AES) is based on the Auger total secondary electron energy distribution, and an ion gun to process, which involves the core-level ionization of an atom with provide depth profiling capability. subsequent deexcitation occurring by an outer-level electron de The high surface sensitivity of Auger spectroscopy which dictates caying to fill the core hole. The excess energy is transferred to the need for an ultrahigh-vacuum system is due to the limited and causes the ejection of another electron, which is by definition mean free path of electrons in the 0-3000 e V kinetic energy an Auger electron. The Auger electron transition, denoted by range. The Auger peaks decay exponentially with overlayer cov the electron levels involved, is independent of the excitation erage, which is consistent with an exponential dependence of source and leaves the atom with a constant kinetic energy. The escape probability on the depth of the parent atom. A compila kinetic energy is given by the differences in binding energies for tion of data from a variety of sources has been used to generate the three levels (for example, EK-E L, - EL ) minus a correction 2 an escape depth curve which falls in the range of 5-30 A in the term for the work function and electron wave function relaxation. energy range from 0 to 3000 eV. The observed escape depth does When the Auger transition occurs within a few angstroms of the not show a strong dependence on the matrix.
Author: Paul William Palmberg
Publisher:
ISBN:
Category : Auger effect
Languages : en
Pages : 182
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Book Description
Author: Michael Thompson
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 418
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Book Description
Author: T. A. Carlson
Publisher:
ISBN:
Category :
Languages : en
Pages : 417
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Book Description
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
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Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: Giorgio Speranza
Publisher: CRC Press
ISBN: 1000992837
Category : Science
Languages : en
Pages : 234
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Book Description
This book provides a theoretical background to X-ray photoelectron spectroscopy (XPS) and a practical guide to the analysis of the XPS spectra using the RxpsG software, a powerful tool for XPS analysis. Although there are several publications and books illustrating the theory behind XPS and the origin of the spectral feature, this book provides an additional practical introduction to the use of RxpsG. It illustrates how to use the RxpsG software to perform specific key operations, with figures and examples which readers can reproduce themselves. The book contains a list of theoretical sections explaining the appearance of the various spectral features (core‐lines, Auger components, valence bands, loss features, etc.). They are accompanied by practical steps, so readers can learn how to analyze specific spectral features using the various functions of the RxpsG software. This book is a useful guide for researchers in physics, chemistry, and material science who are looking to begin using XPS, in addition to experienced researchers who want to learn how to use RxpsG. In the digital format, the spectral data and step-by-step indications are provided to reproduce the examples given in the textbook. RxpsG is a free software for the spectral analysis. Readers can find the installation information and download the package from https://github.com/GSperanza/ website. RxpsG was developed mainly by Giorgio Speranza with the help of his colleague dr. Roberto Canteri working at Fondazione Bruno Kessler. Key Features: Simplifies the use of RxpsG, how it works, and its applications. Demonstrates RxpsG using a reproduction of the graphical interface of RxpsG, showing the steps needed to perform a specific task and the effect on the XPS spectra. Accessible to readers without any prior experience using the RxpsG software. Giorgio Speranza is Senior Researcher at Fondazione Bruno Kessler – Trento Italy, Associate Member of the Italian National Council of Research, and Associate Member of the Department of Industrial Engineering at the University of Trento, Italy.
Author: B.G. Yacobi
Publisher: Springer Science & Business Media
ISBN: 1489914927
Category : Science
Languages : en
Pages : 459
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Book Description
The main objective of this book is to systematically describe the basic principles of the most widely used techniques for the analysis of physical, structural, and compositional properties of solids with a spatial resolution of approxi mately 1 ~m or less. Many books and reviews on a wide variety of microanalysis techniques have appeared in recent years, and the purpose of this book is not to replace them. Rather, the motivation for combining the descriptions of various mi croanalysis techniques in one comprehensive volume is the need for a reference source to help identify microanalysis techniques, and their capabilities, for obtaining particular information on solid-state materials. In principle, there are several possible ways to group the various micro analysis techniques. They can be distinguished by the means of excitation, or the emitted species, or whether they are surface or bulk-sensitive techniques, or on the basis of the information obtained. We have chosen to group them according to the means of excitation. Thus, the major parts of the book are: Electron Beam Techniques, Ion Beam Techniques, Photon Beam Techniques, Acoustic Wave Excitation, and Tunneling of Electrons and Scanning Probe Microscopies. We hope that this book will be useful to students (final year undergrad uates and graduates) and researchers, such as physicists, material scientists, electrical engineers, and chemists, working in a wide variety of fields in solid state sciences.
Author: Donald T. Hawkins
Publisher:
ISBN: 9781468413885
Category :
Languages : en
Pages : 316
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Book Description
Author: John C. Riviere
Publisher: CRC Press
ISBN: 1420007807
Category : Science
Languages : en
Pages : 671
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Book Description
The original Handbook of Surface and Interface Analysis: Methods for Problem-Solving was based on the authors' firm belief that characterization and analysis of surfaces should be conducted in the context of problem solving and not be based on the capabilities of any individual technique. Now, a decade later, trends in science and technology appear
Author: Khalid Sultan
Publisher: John Wiley & Sons
ISBN: 352783883X
Category : Technology & Engineering
Languages : en
Pages : 228
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Book Description
Practical Guide to Materials Characterization Practice-oriented resource providing a hands-on overview of the most relevant materials characterization techniques in chemistry, physics, engineering, and more Practical Guide to Materials Characterization focuses on the most widely used experimental approaches for structural, morphological, and spectroscopic characterization of materials, providing background, insights on the correct usage of the respective techniques, and the interpretation of the results. With a focus on practical applications, the work illustrates what to use and when, including real-life examples showing which characterization techniques are best suited for particular purposes. Furthermore, the work covers the practical elements of the analytical techniques used to characterize a wide range of functional materials (both in bulk as well as thin film form) in a simple but thorough manner. To aid in reader comprehension, Practical Guide to Materials Characterization is divided into eight distinct chapters. To set the stage, the first chapter of the book reviews the fundamentals of materials characterization that are necessary to understand and use the methods presented in the ensuing chapters. Among the techniques covered are X-ray diffraction, Raman spectroscopy, X-ray spectroscopy, electron microscopies, magnetic measurement techniques, infrared spectroscopy, and dielectric measurements. Specific sample topics covered in the remaining seven chapters include: Bragg’s Law, the Von Laue Treatment, Laue’s Equation, the Rotating Crystal Method, the Powder Method, orientation of single crystals, and structure of polycrystalline aggregates Classical theory of Raman scattering, quantum theory of Raman spectroscopy, high-pressure Raman spectroscopy, and surface enhanced Raman spectroscopy Basic principles of XAS, energy referencing, XPS spectra and its features, Auger Electron Spectroscopy (AES), and interaction of electrons with matter Magnetization measuring instruments, the SQUID magnetometer, and the advantages and disadvantages of vibrating sample magnetometer (VSM) With comprehensive and in-depth coverage of the subject, Practical Guide to Materials Characterization is a key resource for practicing professionals who wish to better understand key concepts in the field and seamlessly harness them in a myriad of applications across many different industries.
