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Author: Gustaaf van Tendeloo
Publisher: John Wiley & Sons
ISBN: 3527641874
Category : Technology & Engineering
Languages : en
Pages : 1484
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Book Description
This completely revised successor to the Handbook of Microscopy supplies in-depth coverage of all imaging technologies from the optical to the electron and scanning techniques. Adopting a twofold approach, the book firstly presents the various technologies as such, before going on to cover the materials class by class, analyzing how the different imaging methods can be successfully applied. It covers the latest developments in techniques, such as in-situ TEM, 3D imaging in TEM and SEM, as well as a broad range of material types, including metals, alloys, ceramics, polymers, semiconductors, minerals, quasicrystals, amorphous solids, among others. The volumes are divided between methods and applications, making this both a reliable reference and handbook for chemists, physicists, biologists, materials scientists and engineers, as well as graduate students and their lecturers.
Author: Gustaaf van Tendeloo
Publisher: John Wiley & Sons
ISBN: 3527641874
Category : Technology & Engineering
Languages : en
Pages : 1484
Get Book Here
Book Description
This completely revised successor to the Handbook of Microscopy supplies in-depth coverage of all imaging technologies from the optical to the electron and scanning techniques. Adopting a twofold approach, the book firstly presents the various technologies as such, before going on to cover the materials class by class, analyzing how the different imaging methods can be successfully applied. It covers the latest developments in techniques, such as in-situ TEM, 3D imaging in TEM and SEM, as well as a broad range of material types, including metals, alloys, ceramics, polymers, semiconductors, minerals, quasicrystals, amorphous solids, among others. The volumes are divided between methods and applications, making this both a reliable reference and handbook for chemists, physicists, biologists, materials scientists and engineers, as well as graduate students and their lecturers.
Author: M. Page
Publisher:
ISBN:
Category :
Languages : en
Pages : 5
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Book Description
The atomic structure and electronic properties of crystalline silicon/hydrogenated amorphous silicon (c-Si/a-Si:H) interfaces in silicon heterojunction (SHJ) solar cells are investigated by high-resolution transmission electron microscopy, atomic-resolution Z-contrast imaging, and electron energy loss spectroscopy. We find that all high-performance SHJ solar cells exhibit atomically abrupt and flat c-Si/a-Si:H interfaces and high disorder of the a-Si:H layers. These atomically abrupt and flat c-Si/a-Si:H interfaces can be realized by direct deposition of a-Si:H on c-Si substrates at a substrate temperature below 150 deg C by hot-wire chemical vapor deposition from pure silane.
Author: B.E. Deal
Publisher: Springer Science & Business Media
ISBN: 1489907742
Category : Science
Languages : en
Pages : 543
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Book Description
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Author: Winfried Mönch
Publisher: Springer Science & Business Media
ISBN: 3662069458
Category : Technology & Engineering
Languages : en
Pages : 269
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Book Description
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Author: Marek Kolmer
Publisher: Springer
ISBN: 331951847X
Category : Science
Languages : en
Pages : 200
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Book Description
Written by leading international experts, this book summarizes the advances in sample preparation, design and construction of dangling bond atomic scale wires and logic gate circuits at the surface of a passivated semi-conductor. Individual chapters cover different aspects of the sample fabrication from research and development point of view, present design and construction as well as microscopic and spectroscopic characteristics of single dangling atomic wires and logic gates, and discuss the tools for design of large atomic scale circuit on a surface.This edited volume includes selected contributions from the “International Workshop on Atomic Wires” held in Krakow in September 2014 completed and updated with most current results up to mid-2016, and offers for the first time an overview of up-to-date knowledge in the burgeoning field of atomic scale circuits. The book will appeal to researchers and scholars interested in nanoscience and its various sub-fields including, in particular, molecular electronics, atomic scale electronics and nanoelectronics.
Author: Klaus D. Sattler
Publisher: CRC Press
ISBN: 1000699870
Category : Technology & Engineering
Languages : en
Pages : 1008
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Book Description
This 21st Century Nanoscience Handbook will be the most comprehensive, up-to-date large reference work for the field of nanoscience. Handbook of Nanophysics, by the same editor, published in the fall of 2010, embraced as the first comprehensive reference to consider both fundamental and applied aspects of nanophysics. This follow-up project has been conceived as a necessary expansion and full update that considers the significant advances made in the field since 2010. It goes well beyond the physics as warranted by recent developments in the field. The fifth volume in a ten-volume set covers exotic nanostructures and quantum systems. Key Features: Provides the most comprehensive, up-to-date large reference work for the field. Chapters written by international experts in the field. Emphasises presentation and real results and applications. This handbook distinguishes itself from other works by its breadth of coverage, readability and timely topics. The intended readership is very broad, from students and instructors to engineers, physicists, chemists, biologists, biomedical researchers, industry professionals, governmental scientists, and others whose work is impacted by nanotechnology. It will be an indispensable resource in academic, government, and industry libraries worldwide. The fields impacted by nanoscience extend from materials science and engineering to biotechnology, biomedical engineering, medicine, electrical engineering, pharmaceutical science, computer technology, aerospace engineering, mechanical engineering, food science, and beyond.
Author: Cristian V. Ciobanu
Publisher: John Wiley & Sons
ISBN: 3527655042
Category : Technology & Engineering
Languages : en
Pages : 212
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Book Description
This work fills the gap for a comprehensive reference conveying the developments in global optimization of atomic structures using genetic algorithms. Over the last few decades, such algorithms based on mimicking the processes of natural evolution have made their way from computer science disciplines to solid states physics and chemistry, where they have demonstrated their versatility and predictive power for many materials. Following an introduction and historical perspective, the text moves on to provide an in-depth description of the algorithm before describing its applications to crystal structure prediction, atomic clusters, surface and interface reconstructions, and quasi one-dimensional nanostructures. The final chapters provide a brief account of other methods for atomic structure optimization and perspectives on the future of the field.
Author: Edoardo Di Napoli
Publisher: Springer
ISBN: 3319538624
Category : Computers
Languages : en
Pages : 267
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Book Description
This book constitutes the thoroughly refereed post-conference proceedings of the First JARA High-Performance Computing Symposium, JARA-HPC 2016, held in Aachen, Germany, in October 2016. The 21 full papers presented were carefully reviewed and selected from 26 submissions. They cover many diverse topics, such as coupling methods and strategies in Computational Fluid Dynamics (CFD), performance portability and applications in HPC, as well as provenance tracking for large-scale simulations.
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 724
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Book Description
Author:
Publisher: Elsevier
ISBN: 0080541011
Category : Science
Languages : en
Pages : 333
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Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
