Atomic Layer Epitaxy of III-V Compound Semiconductors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Atomic Layer Epitaxy of III-V Compound Semiconductors PDF full book. Access full book title Atomic Layer Epitaxy of III-V Compound Semiconductors by Michael A. Tischler. Download full books in PDF and EPUB format.
Author: Michael A. Tischler
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 304
Get Book Here
Book Description
Author: Michael A. Tischler
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 304
Get Book Here
Book Description
Author: Brian Thomas McDermott
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 304
Get Book Here
Book Description
Author: Paul D. Dapkus
Publisher:
ISBN:
Category :
Languages : en
Pages : 27
Get Book Here
Book Description
This program is intended to develop a process for the growth of GaAs and related compounds by Atomic Layer Epitaxy (ALE). The program involves fundamental studies of gas phase kinetics of the organometallic and hydrides to be used in the process as well as surface reaction studies to determine the surface of various organometallics. We have chosen in this program to effect ALE growth in a dense H2 atmosphere. We believe that the reactivity of H2 is important to the removal, by hydrogenation, of the alkyl radicals from the growing surface. To better understand the process we are pursuing fundamental information in two areas. First, basic measurements of the reactivity band reaction products of organometallics and hydrides and of photogenerated species with compound semiconductor surfaces are being undertaken that will determine the feasibility of using photoactivation and in thermal catalytic reactions in the gas phase to accomplish ALE. Second, epitaxial growth experiments are being performed to determine the feasibility of an ALE process employing photodecomposition of surface absorbed species as well as thermal catalytic reactions.
Author: Jyh-Rong Gong
Publisher:
ISBN:
Category :
Languages : en
Pages : 280
Get Book Here
Book Description
Author: Steven P. DenBaars
Publisher:
ISBN:
Category :
Languages : en
Pages : 251
Get Book Here
Book Description
Atomic Layer Epitaxy (ALE) is a promising variation of conventional vapor phase epitaxy which achieves uniform growth of ultra-thin epitaxial layers by a self-limiting monolayer by monolayer deposition process. By developing a new regime of metalorganic chemical vapor deposition (MOCVD) growth, in which saturated surface reactions control the growth, it is possible to alternately deposit monolayers of column III and column V elements so that only one monolayer of the III-V compound semiconductor is deposited in every cycle of the deposition. In this thesis, ALE growth of single crystal GaAs, as well as AlAs and GaAs/AlGaAs heterostructures and devices is demonstrated. We have been able to grow extremely uniform ultra-thin epitaxial layers and quantum wells (QWs) with thickness variations of less than one monolayer per cm over an entire sample in an optimized reactor using ALE. The observed dependence of the growth rate on temperature and trimethylgallium flux is modeled by first order adsorption kinetics utilizing measured reaction rate constants. The low temperature photoluminescence (PL) of ALE grown GaAs QW's exhibit narrow line intrinsic luminescence with linewidths comparable to the best reported values by conventional MOCVD. (jhd).
Author: Kimberly G. Reid
Publisher:
ISBN:
Category :
Languages : en
Pages : 244
Get Book Here
Book Description
Author: M. Ozeki
Publisher:
ISBN:
Category :
Languages : en
Pages : 50
Get Book Here
Book Description
Author: Donggeun Jung
Publisher:
ISBN:
Category :
Languages : en
Pages : 252
Get Book Here
Book Description
Author: T. Suntola
Publisher: Springer
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 200
Get Book Here
Book Description
This book provides a detailed study of the Atomic Layer Epitaxy technique (ALE), its development, current and potential applications. The rapid development of coating technologies over the last 25 years has been instrumental in generating interest and expertise in thin films of materials, and indeed the market for thin film coatings is currently £3 billion with projected annual growth of 20 to 30% [1]. ALE is typical of thin-film processes in that problems in the processing or preparation of good quality epitaxial films have been overcome, resulting in better performance, novel applications of previously unsuitable materials, and the development of new devices. Many materials exhibit interesting and novel properties when prepared as thin films and doped. Vapour-deposited coatings and films are used extensively in the semiconductor and related industries for making single devices, integrated circuits, microwave hybrid integrated circuits, compact discs, solar reflective glazing, fibre optics, photo voltaic cells, sensors, displays, and many other products in general, everyday use. The ALE technique was developed by a research team led by Tuomo Suntola, working for Instrumentarium Oy in Finland. The key members of this team were lorma Antson, Arto Pakkala and Sven Lindfors. In 1977, the research team moved from Instrumentarium to Lohja Corporation, where they continued the development of ALE and were granted a patent in the same year. By 1980, the technique was sufficiently advanced that they were producing flat-screen electroluminescent displays based on a manganese-doped zinc sulphide layer.
Author: Takashi Hariu
Publisher: World Scientific
ISBN: 9789971508395
Category : Technology & Engineering
Languages : en
Pages : 356
Get Book Here
Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
