Atomic Diffusion at Polycrystalline-silicon/gallium Arsenide Interfaces PDF Download
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Author: Karen Lynne Kavanagh
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 372
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Book Description
Author: Karen Lynne Kavanagh
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 372
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Book Description
Author: Ikegami
Publisher: CRC Press
ISBN: 9780750302500
Category : Technology & Engineering
Languages : en
Pages : 1002
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Book Description
Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 768
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Author: M. R. Brozel
Publisher: Inst of Engineering & Technology
ISBN: 9780852968857
Category : Technology & Engineering
Languages : en
Pages : 981
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Book Description
It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 480
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Author: Donald T. Hawkins
Publisher: Springer Science & Business Media
ISBN: 1468413872
Category : Science
Languages : en
Pages : 305
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Book Description
Auger electron spectroscopy is rapidly developing into the single most powerful analytical technique in basic and applied science.for investigating the chemical and structural properties of solids. Its ex plosive growth beginning in 1967 was triggered by the development of Auger analyzers capable of de tecting one atom layer of material in a fraction of a second. Continued growth was guaranteed firstly by the commercial availability of apparatus which combined the capabilities of scanning electron mi croscopy and ion-mill depth profiling with Auger analysis, and secondly by the increasing need to know the atomistics of many processes in fundamental research and engineering applications. The expanding use of Auger analysis was accompanied by an increase in the number of publications dealing with it. Because of the developing nature of Auger spectroscopy, the articles have appeared in many different sources covering diverse disciplines, so that it is extremely difficult to discover just what has or has not been subjected to Auger analysis. In this situation, a comprehensive bibliography is obviou-sly useful to those both inside and outside the field. For those in the field, this bibliography should be a wonderful time saver for locating certain references, in researching a particular topic, or when considering various aspects of instrumentation or data analysis. This bibliography not only provides the most complete listing of references pertinent to surface Auger analysis available today, but it is also a basis for extrapolating from past trends to future expectations.
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ISBN:
Category : Canada
Languages : en
Pages : 736
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Author:
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ISBN:
Category : Aeronautics
Languages : en
Pages : 702
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Author: E. Kasper
Publisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411
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Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 698
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Book Description
