Author: Manfred Helm
Publisher: CRC Press
ISBN: 9789056996833
Category : Technology & Engineering
Languages : en
Pages : 424
Book Description
This book offers a thorough survey of long wavelength infrared semiconductor emitters based primarily on quantum wells and superlattices. Featuring contributions from the most prominent researchers in the field, this volume allows readers to compare different types of lasers as well as examine investigations of potential far-infrared/terrahertz sources. This is an essential reference for researchers, engineers and graduate students who wish to obtain comprehensive knowledge about infrared semiconductor sources and recent developments in this field.
Antimonide-Related Strained-Layer Heterostructures
Author: M. O. Manasreh
Publisher: CRC Press
ISBN: 1000725308
Category : Technology & Engineering
Languages : en
Pages : 526
Book Description
Interest in antimonide-related heterostructures is burgeoning due to their applications as light sources, diode lasers, modulators, filters, switches, nonlinear optics, and field-defect transistors. This volume, featuring contributions from leading researchers in the field, is the first book to focus on antimonide-related topics. It offers to both the beginning student and the advanced researcher a comprehensive review of the state of the art in this exciting new area of research.
Publisher: CRC Press
ISBN: 1000725308
Category : Technology & Engineering
Languages : en
Pages : 526
Book Description
Interest in antimonide-related heterostructures is burgeoning due to their applications as light sources, diode lasers, modulators, filters, switches, nonlinear optics, and field-defect transistors. This volume, featuring contributions from leading researchers in the field, is the first book to focus on antimonide-related topics. It offers to both the beginning student and the advanced researcher a comprehensive review of the state of the art in this exciting new area of research.
Long Wavelength Infrared Emitters Based on Quantum Wells and Superlattices
Author: Manfred Helm
Publisher: CRC Press
ISBN: 9789056996833
Category : Technology & Engineering
Languages : en
Pages : 424
Book Description
This book offers a thorough survey of long wavelength infrared semiconductor emitters based primarily on quantum wells and superlattices. Featuring contributions from the most prominent researchers in the field, this volume allows readers to compare different types of lasers as well as examine investigations of potential far-infrared/terrahertz sources. This is an essential reference for researchers, engineers and graduate students who wish to obtain comprehensive knowledge about infrared semiconductor sources and recent developments in this field.
Publisher: CRC Press
ISBN: 9789056996833
Category : Technology & Engineering
Languages : en
Pages : 424
Book Description
This book offers a thorough survey of long wavelength infrared semiconductor emitters based primarily on quantum wells and superlattices. Featuring contributions from the most prominent researchers in the field, this volume allows readers to compare different types of lasers as well as examine investigations of potential far-infrared/terrahertz sources. This is an essential reference for researchers, engineers and graduate students who wish to obtain comprehensive knowledge about infrared semiconductor sources and recent developments in this field.
Antimonide-based Infrared Detectors
Author: Antoni Rogalski
Publisher: SPIE-International Society for Optical Engineering
ISBN: 9781510611399
Category : Antimonides
Languages : en
Pages :
Book Description
"Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--
Publisher: SPIE-International Society for Optical Engineering
ISBN: 9781510611399
Category : Antimonides
Languages : en
Pages :
Book Description
"Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--
Mid-infrared Optoelectronics
Author: Eric TourniƩ
Publisher: Woodhead Publishing
ISBN: 0081027389
Category : Technology & Engineering
Languages : en
Pages : 754
Book Description
Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. - Provides a comprehensive overview of mid-infrared photodetectors and light sources and the latest materials and devices - Reviews emerging areas of research in the field of mid-infrared optoelectronics, including new materials, such as wide bandgap materials, chalcogenides and new approaches, like heterogeneous integration - Includes information on the most relevant applications in industry, like gas sensing, spectroscopy and imaging
Publisher: Woodhead Publishing
ISBN: 0081027389
Category : Technology & Engineering
Languages : en
Pages : 754
Book Description
Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. - Provides a comprehensive overview of mid-infrared photodetectors and light sources and the latest materials and devices - Reviews emerging areas of research in the field of mid-infrared optoelectronics, including new materials, such as wide bandgap materials, chalcogenides and new approaches, like heterogeneous integration - Includes information on the most relevant applications in industry, like gas sensing, spectroscopy and imaging
Properties of III-V Quantum Wells and Superlattices
Author: P. K. Bhattacharya
Publisher: IET
ISBN: 9780852968819
Category : Science
Languages : en
Pages : 238
Book Description
A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.
Publisher: IET
ISBN: 9780852968819
Category : Science
Languages : en
Pages : 238
Book Description
A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.
Deep-well GaAs- and InP-based Quantum Cascade Lasers for Mid-infared Emission
Author: Mithun D'Souza
Publisher:
ISBN:
Category :
Languages : en
Pages : 166
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 166
Book Description
Intersubband Transitions in Quantum Wells: Physics and Device Applications II
Author:
Publisher: Academic Press
ISBN: 0080864643
Category : Science
Languages : en
Pages : 257
Book Description
Intersubband Transitions in Quantum Wells: Physics and Device Applications II
Publisher: Academic Press
ISBN: 0080864643
Category : Science
Languages : en
Pages : 257
Book Description
Intersubband Transitions in Quantum Wells: Physics and Device Applications II
Intersubband Transitions in Quantum Wells: Physics and Devices
Author: Sheng S. Li
Publisher: Springer Science & Business Media
ISBN: 1461557593
Category : Science
Languages : en
Pages : 221
Book Description
The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters.
Publisher: Springer Science & Business Media
ISBN: 1461557593
Category : Science
Languages : en
Pages : 221
Book Description
The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters.
Physics and Technology of High-k Materials 9
Author: S. Kar
Publisher: The Electrochemical Society
ISBN: 1607682575
Category :
Languages : en
Pages : 504
Book Description
Publisher: The Electrochemical Society
ISBN: 1607682575
Category :
Languages : en
Pages : 504
Book Description
Compound Semiconductor Integrated Circuits
Author: Tho T Vu
Publisher: World Scientific
ISBN: 9814486434
Category : Technology & Engineering
Languages : en
Pages : 363
Book Description
This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies.
Publisher: World Scientific
ISBN: 9814486434
Category : Technology & Engineering
Languages : en
Pages : 363
Book Description
This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies.