Analysis of Impact of Negative Bias Temperature Instability on Performance of Analog Circuits PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Analysis of Impact of Negative Bias Temperature Instability on Performance of Analog Circuits PDF full book. Access full book title Analysis of Impact of Negative Bias Temperature Instability on Performance of Analog Circuits by Raghavendra Kamath. Download full books in PDF and EPUB format.
Author: Raghavendra Kamath
Publisher:
ISBN:
Category :
Languages : en
Pages : 86
Get Book Here
Book Description
Author: Raghavendra Kamath
Publisher:
ISBN:
Category :
Languages : en
Pages : 86
Get Book Here
Book Description
Author: Yixin Yu
Publisher:
ISBN:
Category :
Languages : en
Pages : 63
Get Book Here
Book Description
Nanoscale p-channel transistors under negative gate bias at an elevated temperature show threshold voltage degradation after a short period of stress time. In addition, nanoscale (45 nm) n-channel transistors using high-k (HfO2) dielectrics to reduce gate leakage power for advanced microprocessors exhibit fast transient charge trapping effect leading to threshold voltage instability and mobility reduction. A simulation methodology to quantify the circuit level degradation subjected to negative bias temperature instability (NBTI) and fast transient charge trapping effect has been developed in this thesis work. Different current mirror and two-stage operation amplifier structures are studied to evaluate the impact of NBTI on CMOS analog circuit performances for nanoscale applications. Fundamental digital circuit such as an eleven-stage ring oscillator has also been evaluated to examine the fast transient charge transient effect of HfO2 high-k transistors on the propagation delay of ring oscillator performance. The preliminary results show that the negative bias temperature instability reduces the bandwidth of CMOS operating amplifiers, but increases the amplifier's voltage gain at midfrequency range. The transient charge trapping effect increases the propagation delay of ring oscillator. The evaluation methodology developed in this thesis could be extended to study other CMOS device and circuit reliability issues subjected to electrical and temperature stresses.
Author: Jawar Singh
Publisher: Springer Science & Business Media
ISBN: 1461408180
Category : Technology & Engineering
Languages : en
Pages : 176
Get Book Here
Book Description
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design. Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis; Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices; Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
Author: Herman Casier
Publisher: Springer Science & Business Media
ISBN: 9400703910
Category : Technology & Engineering
Languages : en
Pages : 369
Get Book Here
Book Description
Analog Circuit Design contains the contribution of 18 tutorials of the 19th workshop on Advances in Analog Circuit Design. Each part discusses a specific to-date topic on new and valuable design ideas in the area of analog circuit design. Each part is presented by six experts in that field and state of the art information is shared and overviewed. This book is number 20 in this successful series of Analog Circuit Design, providing valuable information and excellent overviews of: Robust Design, chaired by Herman Casier, Consultant Sigma Delta Converters, chaired by Prof. Michiel Steyaert, Catholic University Leuven RFID, chaired by Prof. Arthur van Roermund, Eindhoven University of Technology Analog Circuit Design is an essential reference source for analog circuit designers and researchers wishing to keep abreast with the latest development in the field. The tutorial coverage also makes it suitable for use in an advanced design course.
Author: Tibor Grasser
Publisher: Springer
ISBN: 3319089943
Category : Technology & Engineering
Languages : en
Pages : 518
Get Book Here
Book Description
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Author: Tibor Grasser
Publisher: Springer Science & Business Media
ISBN: 1461479096
Category : Technology & Engineering
Languages : en
Pages : 805
Get Book Here
Book Description
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
Author: Elie Maricau
Publisher: Springer Science & Business Media
ISBN: 1461461634
Category : Technology & Engineering
Languages : en
Pages : 208
Get Book Here
Book Description
This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed. The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.
Author: Electrochemical Society. Meeting
Publisher: The Electrochemical Society
ISBN: 9781566773478
Category : Science
Languages : en
Pages : 652
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Silicon dioxide
Languages : en
Pages : 660
Get Book Here
Book Description
Author: Souvik Mahapatra
Publisher: Springer
ISBN: 8132225082
Category : Technology & Engineering
Languages : en
Pages : 282
Get Book Here
Book Description
This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
