Analysis of Cu Difusion in ZnTe-Based Contacts for Thin-Film CdS/CdTe Solar Cells PDF Download
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Languages : en
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Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Nimetallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100 deg. C to 300 deg. C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cuat the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region.
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Languages : en
Pages : 0
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Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Nimetallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100 deg. C to 300 deg. C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cuat the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region.
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Languages : en
Pages : 5
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Book Description
Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Ni metallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100 C to 300 C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cu at the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region.
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Category : Cadmium sulfide photoconductive cells
Languages : en
Pages : 18
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Category :
Languages : en
Pages : 18
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Author: Darshini Desai
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ISBN: 9781109861761
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Languages : en
Pages : 320
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Photovoltaic device modeling results obtained using AMPS (Analysis of microelectronic and photonic structures) suggest that the dominant recombination mechanism is the SRH recombination through midgap states.
Author: Chitra Narayanswamy
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Category : Secondary ion mass spectrometry
Languages : en
Pages : 146
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Category : Cadmium sulfide photoconductive cells
Languages : en
Pages :
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Author: M. J. Romero
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Category :
Languages : en
Pages : 9
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We report on the recent use of cathodoluminescence (CL) to probe the depth-dependent changes in radiative recombination that occur in CdTe devices during ZnTe:Cu contacting procedures. These types of CL measurements may be useful to assist in linking impurity diffusion (e.g., Cu) from the contact with depth-dependent variation in electrical activation within the CdTe layer. Variable-energy CL suggests that diffusion from the ZnTe:Cu contact interface may assist in reducing donors levels in the CdTe bulk, and thereby yield p-type material in the region near the contact. CL analysis near abrupt metal discontinuities provides estimates of diffusion lengths for carriers associated with both excitonic and donor-to-acceptor pair recombination. Finally, CL measurements at increasing excitation levels (i.e., increasing electron-beam current) provides estimates of the defect state density, as well as providing evidence that discrete multiple defect bands may exist in CdTe prior to contacting.
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Languages : en
Pages : 6
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We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of (almost equal to)360 C. At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320 C. C-V analysis indicates that a ZnTe:Cu layer thickness of (almost equal to)
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Languages : en
Pages : 0
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We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at0.55 eV whose concentration is significant when the Cu concentration ishigh. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.
