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Author: Wade H. Shafer
Publisher: Springer Science & Business Media
ISBN: 1468451979
Category : Science
Languages : en
Pages : 407
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Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1 957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 29 (thesis year 1984) a total of 12,637 theses titles from 23 Canadian and 202 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 29 reports theses submitted in 1984, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.
Author: Wade H. Shafer
Publisher: Springer Science & Business Media
ISBN: 1468451979
Category : Science
Languages : en
Pages : 407
Get Book Here
Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1 957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 29 (thesis year 1984) a total of 12,637 theses titles from 23 Canadian and 202 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 29 reports theses submitted in 1984, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.
Author: Narain Arora
Publisher: World Scientific
ISBN: 9814365491
Category : Technology & Engineering
Languages : en
Pages : 633
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Book Description
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Author: Narain D. Arora
Publisher: Springer Science & Business Media
ISBN: 3709192471
Category : Computers
Languages : en
Pages : 628
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Book Description
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Author: Yannis Tsividis
Publisher: McGraw-Hill Science, Engineering & Mathematics
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 536
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Book Description
Author: Manoj Kumar Majumder
Publisher: CRC Press
ISBN: 1000223094
Category : Science
Languages : en
Pages : 350
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Book Description
Focussing on micro- and nanoelectronics design and technology, this book provides thorough analysis and demonstration, starting from semiconductor devices to VLSI fabrication, designing (analog and digital), on-chip interconnect modeling culminating with emerging non-silicon/ nano devices. It gives detailed description of both theoretical as well as industry standard HSPICE, Verilog, Cadence simulation based real-time modeling approach with focus on fabrication of bulk and nano-devices. Each chapter of this proposed title starts with a brief introduction of the presented topic and ends with a summary indicating the futuristic aspect including practice questions. Aimed at researchers and senior undergraduate/graduate students in electrical and electronics engineering, microelectronics, nanoelectronics and nanotechnology, this book: Provides broad and comprehensive coverage from Microelectronics to Nanoelectronics including design in analog and digital electronics. Includes HDL, and VLSI design going into the nanoelectronics arena. Discusses devices, circuit analysis, design methodology, and real-time simulation based on industry standard HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs (TFETs) and CNTFETs including their circuit co-designing. Covers real time illustration using industry standard Verilog, Cadence and Synopsys simulations.
Author: Gerson A. S. Machado
Publisher: IET
ISBN: 9780852968741
Category : Technology & Engineering
Languages : en
Pages : 1072
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Book Description
This book brings together innovative modelling, simulation and design techniques in CMOS, SOI, GaAs and BJT to achieve successful high-yield manufacture for low-power, high-speed and reliable-by-design analogue and mixed-mode integrated systems.
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 184
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Book Description
Author: Jean-Michel Bergé
Publisher: Springer Science & Business Media
ISBN: 1461523338
Category : Technology & Engineering
Languages : en
Pages : 160
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Book Description
Modeling in Analog Design highlights some of the most pressing issues in the use of modeling techniques for design of analogue circuits. Using models for circuit design gives designers the power to express directly the behaviour of parts of a circuit in addition to using other pre-defined components. There are numerous advantages to this new category of analog behavioral language. In the short term, by favouring the top-down design and raising the level of description abstraction, this approach provides greater freedom of implementation and a higher degree of technology independence. In the longer term, analog synthesis and formal optimisation are targeted. Modeling in Analog Design introduces the reader to two main language standards: VHDL-A and MHDL. It goes on to provide in-depth examples of the use of these languages to model analog devices. The final part is devoted to the very important topic of modeling the thermal and electrothermal aspects of devices. This book is essential reading for analog designers using behavioral languages and analog CAD tool development environments who have to provide the tools used by the designers.
Author: Lance A. Glasser
Publisher: Addison Wesley Publishing Company
ISBN:
Category : Computers
Languages : en
Pages : 500
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Book Description
Author:
Publisher:
ISBN:
Category : Earth sciences
Languages : en
Pages : 364
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Book Description
