Scientific and Technical Aerospace Reports PDF Download
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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 704
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Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 704
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Book Description
Author:
Publisher: Academic Press
ISBN: 0080864309
Category : Technology & Engineering
Languages : en
Pages : 443
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Book Description
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
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Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: Committee on New Sensor Technologies: Materials and Applications
Publisher: National Academies Press
ISBN: 0309587433
Category : Technology & Engineering
Languages : en
Pages : 146
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Book Description
Advances in materials science and engineering have paved the way for the development of new and more capable sensors. Drawing upon case studies from manufacturing and structural monitoring and involving chemical and long wave-length infrared sensors, this book suggests an approach that frames the relevant technical issues in such a way as to expedite the consideration of new and novel sensor materials. It enables a multidisciplinary approach for identifying opportunities and making realistic assessments of technical risk and could be used to guide relevant research and development in sensor technologies.
Author: Nadine Collaert
Publisher: Woodhead Publishing
ISBN: 0081020627
Category : Technology & Engineering
Languages : en
Pages : 390
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Book Description
High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. - Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations - Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability - Provides a broad overview of the topic, from materials integration to circuits
Author: Sorin Cristoloveanu
Publisher: World Scientific
ISBN: 9814656925
Category : Technology & Engineering
Languages : en
Pages : 186
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Book Description
This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013. These articles present the ground-breaking works by world leading experts from CMOS and SOI, to wide-bandgap semiconductor technology, terahertz technology, and bioelectronics.WOFE is a bi-annual gathering of leading researchers from around the world, across multiple disciplines, to share their results and discuss key issues in the future development of microelectronics, photonics, and nanoelectronics.The focus of this volume includes topics ranging from advanced transistors: TFT, FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and materials.This book will be a useful reference for scientists, engineers, researchers, and inventors looking for the future research and development direction of microelectronics, and the trends and technology underpinning these developments.
Author: Sergei A. Gurevich
Publisher: World Scientific
ISBN: 9789810232375
Category : Science
Languages : en
Pages : 220
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Book Description
This book is composed of seven invited papers which present the current status of high speed diode lasers. Fast carrier and photon dynamics in directly modulated MQW lasers is analyzed and novel design approaches are considered which were critical for the demonstration and record of 40 GHz modulation bandwidth. Attention is centered on the challenges in creation of high speed and low chirp single mode DFB lasers. Recent progress in mode-locked diode lasers is covered, specifically by the examples of 160 fs pulse generation and appearance of microwave pulse repetition rates. Future trends in increasing of high speed laser performance are also examined.
Author: S. Kar
Publisher: The Electrochemical Society
ISBN: 1607682575
Category :
Languages : en
Pages : 504
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Book Description
Author: AJAY KUMAR SINGH
Publisher: PHI Learning Pvt. Ltd.
ISBN: 8120344715
Category : Technology & Engineering
Languages : en
Pages : 609
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Book Description
This book, now in its Second Edition, provides a basis for understanding the characteristics, working principle, operation and limitations of semi-conductor devices. In this new edition, many sections are re-written to present the concepts related to device physics in more clearer and easy to understand manner. The primary objective of this textbook is to provide all the relevant topics on the semiconductor materials and semiconductor devices in a single volume. It includes enough mathematical expressions to provide a good foundation for the basic understanding of the semiconductor devices. It covers not only the state-of-the-art devices but also future approaches that go beyond the current technology. Designed primarily as a text for the postgraduate students of physics and electronics, the book would also be useful for the undergraduate students of electronics and electrical engineering, and electronics and communi-cation engineering. Highlights of the Book : Includes topics on the latest technologies Covers important points in each chapter Provides a number of solved and unsolved problems along with explanation type questions Emphasizes on the mathematical derivation
Author: Mary D Archer
Publisher: World Scientific
ISBN: 1783266708
Category : Science
Languages : en
Pages : 706
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Book Description
The second edition of Clean Electricity from Photovoltaics, first published in 2001, provides an updated account of the underlying science, technology and market prospects for photovoltaics. All areas have advanced considerably in the decade since the first edition was published, which include: multi-crystalline silicon cell efficiencies having made impressive advances, thin-film CdTe cells having established a decisive market presence, and organic photovoltaics holding out the prospect of economical large-scale power production.
