Advanced Physical Models for Silicon Device Simulation PDF Download
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Author: Andreas Schenk
Publisher: Springer Science & Business Media
ISBN: 370916494X
Category : Technology & Engineering
Languages : en
Pages : 370
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Book Description
From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal
Author: Andreas Schenk
Publisher: Springer Science & Business Media
ISBN: 370916494X
Category : Technology & Engineering
Languages : en
Pages : 370
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Book Description
From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal
Author: Damien Querlioz
Publisher: John Wiley & Sons
ISBN: 1118618440
Category : Technology & Engineering
Languages : en
Pages : 191
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Book Description
The emergence of nanoelectronics has led us to renew the concepts of transport theory used in semiconductor device physics and the engineering community. It has become crucial to question the traditional semi-classical view of charge carrier transport and to adequately take into account the wave-like nature of electrons by considering not only their coherent evolution but also the out-of-equilibrium states and the scattering effects. This book gives an overview of the quantum transport approaches for nanodevices and focuses on the Wigner formalism. It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube transistor. In the final part, decoherence theory is used to explain the emergence of the semi-classical transport in nanodevices.
Author: Tor A Fjeldly
Publisher: World Scientific
ISBN: 9814493260
Category : Technology & Engineering
Languages : en
Pages : 188
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Book Description
The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field.The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.
Author: Tommaso Ruggeri
Publisher: World Scientific
ISBN: 9812708901
Category : Mathematics
Languages : en
Pages : 228
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Book Description
This book brings together several contributions from leading experts in the field of nonlinear wave propagation. This field, which during the last three decades has seen important breakthroughs from the theoretical point of view, has recently acquired increased relevance due to advances in the technology of fluids e.g. at microscale or nanoscale and the recognition of crucial applications to the understanding of biological phenomena. Nonlinear wave theory requires the use of disparate approaches, including formal and rigorous asymptotic methods, Lie group theory, energy methods, numerical analysis, and bifurcation theory. This book presents a unique blend in which different aspects of the theory are enlightened and several real-life applications are investigated. The book will be a valuable resource for applied scientists interested in some of the most recent advances in the theory and in the applications of wave propagation, shock formation, nonequilibrium thermodynamics and energy methods.
Author: Christoph Jungemann
Publisher: Springer Science & Business Media
ISBN: 3709160863
Category : Technology & Engineering
Languages : en
Pages : 278
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Book Description
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Author: Bejoy N Pushpakaran
Publisher: World Scientific
ISBN: 9813237848
Category : Technology & Engineering
Languages : en
Pages : 462
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Book Description
The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.Related Link(s)
Author: Harald Gossner
Publisher: Elsevier
ISBN: 0080526470
Category : Computers
Languages : en
Pages : 305
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Book Description
Simulation Methods for ESD Protection Development looks at the integration of new techniques into a comprehensive development flow, which is now available due advances made in the field during the recent years. These findings allow for an early, stable ESD concept at a very early stage of the technology development, which is essential now development cycles have been reduced. The book also offers ways of increasing the optimization and control of the technology concerning performance, thus making the process more cost effective and increasingly efficient. This title provides a guide through the latest research and technology presenting the ESD protection development methodology. This is based on a combination of process, device and circuit stimulation, and addresses the optimization of the industry critical issue, reduced development cycles.Written to address the needs of the ESD engineer, this text is required reading by all industry practitioners and researchers and students within this field. - The FIRST Extensive overview on the subject of ESD simulation - Addresses the industry critical issue of reduced development cycles, and provides solutions - Presents the latest research in the field with high practical relevance and its results
Author: Chinmay Kumar Maiti
Publisher: World Scientific
ISBN: 9814713090
Category : Technology & Engineering
Languages : en
Pages : 465
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Book Description
Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools.Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text.
Author: Angelo Marcello Anile
Publisher: Springer Science & Business Media
ISBN: 3540328629
Category : Technology & Engineering
Languages : en
Pages : 460
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Book Description
This book is a collection of papers presented at the last Scientific Computing in Electrical Engineering (SCEE) Conference, held in Sicily, in 2004. The series of SCEE conferences aims at addressing mathematical problems which have a relevancy to industry. The areas covered at SCEE-2004 were: Electromagnetism, Circuit Simulation, Coupled Problems and General mathematical and computational methods.
Author: Debdeep Jena
Publisher: Oxford University Press
ISBN: 0192598929
Category : Science
Languages : en
Pages : 896
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Book Description
”Quantum Phenomena do not occur in a Hilbert space. They occur in a laboratory”. - Asher Peres Semiconductor physics is a laboratory to learn and discover the concepts of quantum mechanics and thermodynamics, condensed matter physics, and materials science, and the payoffs are almost immediate in the form of useful semiconductor devices. Debdeep Jena has had the opportunity to work on both sides of the fence - on the fundamental materials science and quantum physics of semiconductors, and in their applications in semiconductor electronic and photonic devices. In Quantum Physics of Semiconductors and Nanostructures, Jena uses this experience to make each topic as tangible and accessible as possible to students at all levels. Consider the simplest physical processes that occur in semiconductors: electron or hole transport in bands and over barriers, collision of electrons with the atoms in the crystal, or when electrons and holes annihilate each other to produce a photon. The correct explanation of these processes require a quantum mechanical treatment. Any shortcuts lead to misconceptions that can take years to dispel, and sometimes become roadblocks towards a deeper understanding and appreciation of the richness of the subject. A typical introductory course on semiconductor physics would then require prerequisites of quantum mechanics, statistical physics and thermodynamics, materials science, and electromagnetism. Rarely would a student have all this background when (s)he takes a course of this nature in most universities. Jena's work fills in these gaps and gives students the background and deeper understanding of the quantum physics of semiconductors and nanostructures.
