The Electronic Theory of Heavily Doped Semiconductors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download The Electronic Theory of Heavily Doped Semiconductors PDF full book. Access full book title The Electronic Theory of Heavily Doped Semiconductors by Viktor Leopolʹdovich Bonch-Bruevich. Download full books in PDF and EPUB format.
Author: Viktor Leopolʹdovich Bonch-Bruevich
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 154
Get Book Here
Book Description
Author: Viktor Leopolʹdovich Bonch-Bruevich
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 154
Get Book Here
Book Description
Author: V. I. Fistul
Publisher: Springer Science & Business Media
ISBN: 146848821X
Category : Science
Languages : en
Pages : 428
Get Book Here
Book Description
Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.
Author: B.I. Shklovskii
Publisher: Springer Science & Business Media
ISBN: 3662024039
Category : Science
Languages : en
Pages : 400
Get Book Here
Book Description
First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.
Author: David Gershoni
Publisher: World Scientific
ISBN: 9789810236137
Category : Science
Languages : en
Pages : 334
Get Book Here
Book Description
The proceedings of this important conference consist of plenary and invited papers published in hard copy and CD-ROM versions. The contributed oral and poster presentations are included in the CD-ROM version only.
Author: Gershoni David
Publisher: World Scientific
ISBN: 9814544426
Category :
Languages : en
Pages : 332
Get Book Here
Book Description
The proceedings of this important conference consist of plenary and invited papers published in hard copy and CD-ROM versions. The contributed oral and poster presentations are included in the CD-ROM version only.
Author:
Publisher:
ISBN:
Category : Weights and measures
Languages : en
Pages : 868
Get Book Here
Book Description
Author:
Publisher: Academic Press
ISBN: 0080864368
Category : Technology & Engineering
Languages : en
Pages : 425
Get Book Here
Book Description
Semiconductors and Semimetals
Author:
Publisher: Newnes
ISBN: 0080932282
Category : Science
Languages : en
Pages : 3572
Get Book Here
Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author: Christophe Goupil
Publisher: John Wiley & Sons
ISBN: 3527413375
Category : Science
Languages : en
Pages : 362
Get Book Here
Book Description
Sound knowledge of the latest research results in the thermodynamics and design of thermoelectric devices, providing a solid foundation for thermoelectric element and module design in the technical development process and thus serving as an indispensable tool for any application development. The text is aimed mainly at the project developer in the field of thermoelectric technology, both in academia and industry, as well as at graduate and advanced undergraduate students. Some core sections address the specialist in the field of thermoelectric energy conversion, providing detailed discussion of key points with regard to optimization. The international team of authors with experience in thermoelectrics research represents such institutes as EnsiCaen Universite de Paris, JPL, CalTech, and the German Aerospace Center.
Author: Bernard Bendow
Publisher: Springer Science & Business Media
ISBN: 1461343011
Category : Science
Languages : en
Pages : 530
Get Book Here
Book Description
The First Binational USA-USSR Seminar-Symposium on the Theory of Light Scattering in Condensed Matter was held in Moscow 26-30 May 1975. The initial conception for a light scattering seminar of about fifty scientists - half from each side, including theorists and experimenters "well versed in theory" - arose from discussions between Professor J. L. Birman and Professor K. K. Rebane at the 1971 Paris International Conference on Light Scattering in Solids. This conception won approval among the active scientists on both sides. After considerable planning and some delays, it received both material support and encouragement from the appro priate organizations on each side: in the USA: The National Science Foundation (Division of International Programs), and the National Academy of Sciences; in the USSR: the Academy of Sciences USSR. A variety of reasons contributed to the positive response on both sides: for example, the considerable and high level of theoretical and experimental scientific activity on both sides in laser-related light scattering, optics, and generally - electro dynamics of condensed media - some along rather similiar lines; the impediments to free and easy communication and travel be tween USA and USSR scientists working on related problems; plus the desire to improve both contacts, and the free flow of informa tion and individuals, to the mutual advantage of both sides.
