Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices PDF Download
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Author: R. Bank
Publisher: Birkhäuser
ISBN: 3034856989
Category : Science
Languages : en
Pages : 298
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Book Description
Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues discussed in this area include the design of simulation programs for semiconductors, vectorcomputers, and interface problems in several dimensions. Topics discussed in the area of circuit simulation include the index classification of differential-algebraic systems, connections with ill-posed problems, and regularization techniques. Split discretization procedures were given for the efficient calculation of periodic solutions of circuits taking into acount the latency. Homotopy methods and new numerical techniques for differential-algebraic systems were presented, and im provements of special numerical methods for standard software packages were sug gested. The editors VII Table of Contents Circuit Simulation Merten K.
Author: R. Bank
Publisher: Birkhäuser
ISBN: 3034856989
Category : Science
Languages : en
Pages : 298
Get Book Here
Book Description
Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues discussed in this area include the design of simulation programs for semiconductors, vectorcomputers, and interface problems in several dimensions. Topics discussed in the area of circuit simulation include the index classification of differential-algebraic systems, connections with ill-posed problems, and regularization techniques. Split discretization procedures were given for the efficient calculation of periodic solutions of circuits taking into acount the latency. Homotopy methods and new numerical techniques for differential-algebraic systems were presented, and im provements of special numerical methods for standard software packages were sug gested. The editors VII Table of Contents Circuit Simulation Merten K.
Author: Ansgar Jüngel
Publisher: Birkhäuser
ISBN: 303488334X
Category : Mathematics
Languages : en
Pages : 301
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Book Description
This book presents a hierarchy of macroscopic models for semiconductor devices, studying three classes of models in detail: isentropic drift-diffusion equations, energy-transport models, and quantum hydrodynamic equations. The derivation of each, including physical discussions, is shown. Numerical simulations for modern semiconductor devices are performed, showing the particular features of each. The author develops modern analytical techniques, such as positive solution methods, local energy methods for free-boundary problems and entropy methods.
Author: Randolph E. Bank
Publisher: American Mathematical Soc.
ISBN: 9780821896938
Category : Technology & Engineering
Languages : en
Pages : 206
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Book Description
Numerical simulation is rapidly becoming an important part of the VLSI design process, allowing the engineer to test, evaluate, and optimize various aspects of chip design without resorting to the costly and time-consuming process of fabricating prototypes. This procedure not only accelerates the design process, but also improves the end product, since it is economically feasible to numerically simulate many more options than might otherwise be considered. With the enhanced computing power of today's computers, more sophisticated models are now being developed. This volume contains the proceedings of the AMS-SIAM Summer Seminar on Computational Aspects of VLSI Design, held at the Institute for Mathematics and Its Applications at the University of Minnesota, in the spring of 1987. The seminar featured presentations by some of the top experts working in this area. Their contributions to this volume form an excellent overview of the mathematical and computational problems arising in this area.
Author: Randolph Bank
Publisher: Birkhäuser
ISBN: 3034885288
Category : Mathematics
Languages : en
Pages : 314
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Book Description
Progress in today's high-technology industries is strongly associated with the development of new mathematical tools. A typical illustration of this partnership is the mathematical modelling and numerical simulation of electric circuits and semiconductor devices. At the second Oberwolfach conference devoted to this important and timely field, scientists from around the world, mainly applied mathematicians and electrical engineers from industry and universities, presented their new results. Their contributions, forming the body of this work, cover electric circuit simulation, device simulation and process simulation. Discussions on experiences with standard software packages and improvements of such packages are included. In the semiconductor area special lectures were given on new modelling approaches, numerical techniques and existence and uniqueness results. In this connection, mention is made, for example, of mixed finite element methods, an extension of the Baliga-Patankar technique for a three dimensional simulation, and the connection between semiconductor equations and the Boltzmann equations.
Author: Peter A. Markowich
Publisher: Springer Science & Business Media
ISBN: 3709169615
Category : Mathematics
Languages : en
Pages : 261
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Book Description
In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
Author: Uri M. Ascher
Publisher: SIAM
ISBN: 0898716527
Category : Mathematics
Languages : en
Pages : 403
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Book Description
Develops, analyses, and applies numerical methods for evolutionary, or time-dependent, differential problems.
Author: Randolph E. Bank
Publisher:
ISBN:
Category : Computer simulation
Languages : en
Pages : 324
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Book Description
Author: W.H.A. SCHILDERS
Publisher: Elsevier
ISBN: 0080459153
Category : Mathematics
Languages : en
Pages : 930
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Book Description
This special volume provides a broad overview and insight in the way numerical methods are being used to solve the wide variety of problems in the electronics industry. Furthermore its aim is to give researchers from other fields of application the opportunity to benefit from the results wich have been obtained in the electronics industry.* Complete survey of numerical methods used in the electronic industry* Each chapter is selfcontained* Presents state-of-the-art applications and methods* Internationally recognised authors
Author: Heiner Ryssel
Publisher: Springer Science & Business Media
ISBN: 3709166195
Category : Computers
Languages : en
Pages : 515
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Book Description
SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Author: D. Sloan
Publisher: Elsevier
ISBN: 0080929567
Category : Mathematics
Languages : en
Pages : 480
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Book Description
/homepage/sac/cam/na2000/index.html7-Volume Set now available at special set price ! Over the second half of the 20th century the subject area loosely referred to as numerical analysis of partial differential equations (PDEs) has undergone unprecedented development. At its practical end, the vigorous growth and steady diversification of the field were stimulated by the demand for accurate and reliable tools for computational modelling in physical sciences and engineering, and by the rapid development of computer hardware and architecture. At the more theoretical end, the analytical insight into the underlying stability and accuracy properties of computational algorithms for PDEs was deepened by building upon recent progress in mathematical analysis and in the theory of PDEs. To embark on a comprehensive review of the field of numerical analysis of partial differential equations within a single volume of this journal would have been an impossible task. Indeed, the 16 contributions included here, by some of the foremost world authorities in the subject, represent only a small sample of the major developments. We hope that these articles will, nevertheless, provide the reader with a stimulating glimpse into this diverse, exciting and important field. The opening paper by Thomée reviews the history of numerical analysis of PDEs, starting with the 1928 paper by Courant, Friedrichs and Lewy on the solution of problems of mathematical physics by means of finite differences. This excellent survey takes the reader through the development of finite differences for elliptic problems from the 1930s, and the intense study of finite differences for general initial value problems during the 1950s and 1960s. The formulation of the concept of stability is explored in the Lax equivalence theorem and the Kreiss matrix lemmas. Reference is made to the introduction of the finite element method by structural engineers, and a description is given of the subsequent development and mathematical analysis of the finite element method with piecewise polynomial approximating functions. The penultimate section of Thomée's survey deals with `other classes of approximation methods', and this covers methods such as collocation methods, spectral methods, finite volume methods and boundary integral methods. The final section is devoted to numerical linear algebra for elliptic problems. The next three papers, by Bialecki and Fairweather, Hesthaven and Gottlieb and Dahmen, describe, respectively, spline collocation methods, spectral methods and wavelet methods. The work by Bialecki and Fairweather is a comprehensive overview of orthogonal spline collocation from its first appearance to the latest mathematical developments and applications. The emphasis throughout is on problems in two space dimensions. The paper by Hesthaven and Gottlieb presents a review of Fourier and Chebyshev pseudospectral methods for the solution of hyperbolic PDEs. Particular emphasis is placed on the treatment of boundaries, stability of time discretisations, treatment of non-smooth solutions and multidomain techniques. The paper gives a clear view of the advances that have been made over the last decade in solving hyperbolic problems by means of spectral methods, but it shows that many critical issues remain open. The paper by Dahmen reviews the recent rapid growth in the use of wavelet methods for PDEs. The author focuses on the use of adaptivity, where significant successes have recently been achieved. He describes the potential weaknesses of wavelet methods as well as the perceived strengths, thus giving a balanced view that should encourage the study of wavelet methods.
