A Physics-based Analytical Model of an AlGaN/GaN High Electron Mobility Transistor PDF Download
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Author: Jonathan C. Sippel
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages : 144
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Book Description
Proposes a model of a GaN-based HEMT device, using the Schrödinger and Poisson equations to establish relationships between the sheet carrier density, Fermi Level, and device terminal voltages.
Author: Jonathan C. Sippel
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages : 144
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Book Description
Proposes a model of a GaN-based HEMT device, using the Schrödinger and Poisson equations to establish relationships between the sheet carrier density, Fermi Level, and device terminal voltages.
Author: Guangpu Liu (Graduate student)
Publisher:
ISBN:
Category :
Languages : en
Pages : 63
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Book Description
The main goal of the grad thesis is to develop a physics based analytical model for AlGaN/GaN modulation-doped field effect transistor (MODFET) to study the I-V characteristics, current transfer characteristics, transconductance and drain-conductance. The linear and non-linear of the drain current have been separately calculate and merged them in order to evaluate the I-V characteristics. The method of evaluation of drain current gives high degree accuracy up to Nano-scaled devices. The threshold voltage has been evaluated from current transfer characteristics plot and verified from the transconductance parameter. The large value of transconductance has been obtained for the specific layer thickness of AlGaN and GaN space layer. The drain-conductance has been evaluated to understand the power performance. The graduate thesis incorporates the introduction of the research work in chapter one, gallium nitride material is in chapter two, AlGaN/GaN HEMT polarization effects analysis in chapter three, numerical calculation in chapter four and result discussion in chapter five.
Author: D. Nirmal
Publisher: Springer
ISBN: 9789819775057
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.
Author: Michael S. Shur
Publisher: Springer Science & Business Media
ISBN: 1489919899
Category : Technology & Engineering
Languages : en
Pages : 677
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Book Description
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Author: Swaroop Jallipeta
Publisher:
ISBN:
Category :
Languages : en
Pages : 42
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Book Description
The main objective of this graduate project is to develop an analytical model of AlGaN/GaN high electron mobility transistor (HEMT) device for studying the sheet carrier density in the quantum well and cut-off frequency. This analytical model has been developed by using Matlab. The sheet carrier density in the triangular quantum well has been evaluated by the influence of layer thickness of the doped AlGaN and AlN spacer layer as well as the gate-source biasing to understand the quality of heterojunction and carrier transport. The cut-off frequency has been computed to study the effect of channel length on RF performance of the device. The graduate project constitutes the introduction of the project in Chapter 1, Gallium Nitride material in Chapter 2, HEMT material in Chapter 3, Theory and model in Chapter 4 and results and discussions in Chapter 5.
Author: Manju Korwal Chattopadhyay
Publisher: LAP Lambert Academic Publishing
ISBN: 9783838396293
Category :
Languages : en
Pages : 128
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Book Description
High electron mobility transistor (HEMT) made of compound semiconductors exhibit great potential for high-power applications at RF, microwave, and millimeter-wave frequencies. Owing largely to a high electrical breakdown field, electron sheet charge density, and substrate material with high thermal conductivity, these are capable of handling larger power density signals at high temperatures in unfriendly environments. The present work involves the analytical modeling of AlGaN/GaN material system based HEMTs. A polynomial represents Fermi-level as a non-linear function of sheet carrier density at the interface of HEMTs. Using this polynomial, models for finding the temperature dependent gate capacitance, parasitic MESFET dependent transconductance and dc characteristics including self-heating effects were formulated. The effects of spontaneous and piezoelectric polarization fields, have been investigated in detail. All results show reasonable agreement with the experimental data. Our analytical simulation should be useful in device designing, allowing interactive optimization of device configuration and economically complementing experimental investigations.
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862539
Category : Science
Languages : en
Pages : 430
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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Michael Hosch
Publisher: Cuvillier Verlag
ISBN: 3736938446
Category : Technology & Engineering
Languages : en
Pages : 129
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Book Description
This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 434
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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Adam J. Liddle
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 220
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Book Description
