A New Inverse-modeling-based Technique for Sub-100-nm MOSFET Characterization PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download A New Inverse-modeling-based Technique for Sub-100-nm MOSFET Characterization PDF full book. Access full book title A New Inverse-modeling-based Technique for Sub-100-nm MOSFET Characterization by Zachary Ka Fai Lee. Download full books in PDF and EPUB format.
Author: Zachary Ka Fai Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 168
Get Book Here
Book Description
Author: Zachary Ka Fai Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 168
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 854
Get Book Here
Book Description
Author: Massachusetts Institute of Technology. Research Laboratory of Electronics
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 534
Get Book Here
Book Description
Author: Ihsan Jahed Djomehri
Publisher:
ISBN:
Category :
Languages : en
Pages : 139
Get Book Here
Book Description
(Cont.) The important application of this technique is in the calibration of carrier transport models. With an accurate device topology, the transport model parameters can be adjusted to predict the onstate behavior. Utilizing a mobility model that conforms to the experimental effective field dependence and including a correction for parasitic resistance, the transport model for an advanced NMOS generation at various gate lengths and voltages is calibrated. Employing the Energy Balance model yields an energy relaxation value valid over all devices examined in this work. Furthermore, what has been learned from profile and transport calibration is used in investigating optimal paths for sub-20 nm MOSFET scaling. In a study of candidate architectures such as double-gate, single-gate, and bulk-Si, metrics for the power versus performance trade-off were developed. To conclude, the best trade-off was observed by scaling as a function of gate length with a single near-mid-gap workfunction.
Author: John V. Guttag
Publisher:
ISBN:
Category : Computer science
Languages : en
Pages : 400
Get Book Here
Book Description
Author: Geyong Min
Publisher: Springer Science & Business Media
ISBN: 3540498605
Category : Computers
Languages : en
Pages : 1176
Get Book Here
Book Description
This book constitutes the refereed joint proceedings of ten international workshops held in conjunction with the 4th International Symposium on Parallel and Distributed Processing and Applications, ISPA 2006, held in Sorrento, Italy in December 2006. It contains 116 papers that contribute to enlarging the spectrum of the more general topics treated in the ISPA 2006 main conference.
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 848
Get Book Here
Book Description
Author: Dimitris Tsoukalas
Publisher: Springer Science & Business Media
ISBN: 3709162440
Category : Technology & Engineering
Languages : en
Pages : 463
Get Book Here
Book Description
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Author: Narain Arora
Publisher: World Scientific
ISBN: 9814365491
Category : Technology & Engineering
Languages : en
Pages : 633
Get Book Here
Book Description
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
Get Book Here
Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
