2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) PDF Download
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Author:
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ISBN: 9781665439909
Category :
Languages : en
Pages :
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Book Description
Author: IEEE Staff
Publisher:
ISBN: 9781665439916
Category :
Languages : en
Pages :
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Book Description
The IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) is the forum for developments in bipolar, BiCMOS, and compound semiconductor integrated circuits, devices, and technology Coverage includes all aspects of the technology, from materials, device fabrication, device phenomena, TCAD modeling, compact modeling, integrated circuit design, testing, and system applications A wide range of integrated circuit technologies are covered including bipolar, BiCMOS, SiGe, GaAs, GaN, InP, SiC, and CMOS The latest results in wireless, analog, RF, microwave, high speed digital, mixed signal, optoelectronic, millimeter wave, and THz integrated circuits are embraced
Author:
Publisher:
ISBN: 9781665439909
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: IEEE Staff
Publisher:
ISBN: 9781728197500
Category :
Languages : en
Pages :
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Book Description
The IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) is the forum for developments in bipolar, BiCMOS, and compound semiconductor integrated circuits, devices, and technology Coverage includes all aspects of the technology, from materials, device fabrication, device phenomena, TCAD modeling, compact modeling, integrated circuit design, testing, and system applications A wide range of integrated circuit technologies are covered including bipolar, BiCMOS, SiGe, GaAs, GaN, InP, SiC, and CMOS The latest results in wireless, analog, RF, microwave, high speed digital, mixed signal, optoelectronic, millimeter wave, and THz integrated circuits are embraced
Author: Nadine Collaert
Publisher: Elsevier
ISBN: 0128234504
Category : Technology & Engineering
Languages : en
Pages : 369
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Book Description
New Materials and Devices for 5G Applications and Beyond focuses on the materials, device architectures and enabling integration schemes for 5G applications and emerging technologies. It gives a comprehensive overview of the trade-offs, challenges and unique properties of novel upcoming technologies. Starting from the application side and its requirements, the book examines different technologies under consideration for the different functions, both more conventional to exploratory, and within this context the book provides guidance to the reader on how to possibly optimize the system for a particular application. This book aims at guiding the reader through the technologies required to enable 5G applications, with the main focus on mm-wave frequencies, up to THz. New Materials and Devises for 5G Applications and Beyond is suitable for industrial researchers and development engineers, and researchers in materials science, device engineering and circuit design. Reviews challenges and emerging opportunities for materials, devices, and integration to enable 5G technologies Includes discussion of technologies such as RF-MEMs, RF FINFETs, and transistors based on current and emerging materials (InP, GaN, etc.) Focuses on mm-wave frequencies up to the terahertz regime
Author: Smail Hamamda
Publisher: Springer Nature
ISBN: 981971916X
Category :
Languages : en
Pages : 330
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Book Description
Author: Tho T Vu
Publisher: World Scientific
ISBN: 9814486434
Category : Technology & Engineering
Languages : en
Pages : 363
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Book Description
This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies.
Author: Maurizio Di Paolo Emilio
Publisher: Springer Nature
ISBN: 3031632389
Category :
Languages : en
Pages : 388
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Book Description
Author: Arokia Nathan
Publisher: John Wiley & Sons
ISBN: 139420244X
Category : Technology & Engineering
Languages : en
Pages : 469
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Book Description
75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Author: Gun-Sik Park
Publisher: CRC Press
ISBN: 1000995453
Category : Technology & Engineering
Languages : en
Pages : 773
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Book Description
During the past several decades, tremendous progress has been made in terahertz (THz) science and technology. There is a continuing need to have terahertz waves ready for practical applications. Terahertz photonic and electronic devices are being readied to be employed in application systems such as communication links, satellite communications, radar, surveillance, hard/soft material heating, biomedical treatment, and biomedical diagnostics. This book focuses on the advances in terahertz source technologies both from photonics and electronics (solid-state and vacuum-state) points of view. Written in a noncomplicated language, the book will be useful for a broad spectrum of readers, including advanced undergraduate- and graduate-level students in electronics and photonics, researchers in various disciplines in physics, chemistry, biology, astronomy, and electrical engineering, system engineers in various industrial sectors, general readers, and those who are interested in the interaction between electromagnetic waves and matters and in the effects of electromagnetic waves on matters.
Author: Yogesh Singh Chauhan
Publisher: Elsevier
ISBN: 0323999409
Category : Technology & Engineering
Languages : en
Pages : 262
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Book Description
GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. This book provides an overview of the operation and physics of GaN-based transistors All aspects of the ASM-HEMT model for GaN circuits, an industry standard model, are described in depth by the developers of the model Parameter extraction of GaN devices and measurement data requirements for GaN model extraction are detailed
